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GaAs Heterojunction Bipolar Transistor Device and IC Technology

Published online by Cambridge University Press:  26 February 2011

Michael E. Kim ,
Aaron K. Oki ,
James B. Camou ,
Gary M. Gorman ,
Donald K. Umemoto ,
Madjid E. Hafizi ,
Leszek M. Pawlowicz ,
Kjell S. Stolt  and
Virginia M. Mulvey
Michael E. Kim
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Aaron K. Oki
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
James B. Camou
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Gary M. Gorman
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Donald K. Umemoto
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Madjid E. Hafizi
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Leszek M. Pawlowicz
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Kjell S. Stolt
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
Virginia M. Mulvey
Affiliation:
TRW Inc., Electronics and Technology Division, One Space Park, Redondo Beach, CA 90278
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Abstract

GaAs/AlGaAs N-p-n heterojunction bipolar transistor (GaAs HBT) device and integrated circuit technology which offers key advantages over advanced silicon bipolar and III-V compound field-effect transistors is maturing towards system insertion. The TRW device and IC fabrication process, basic HBT dc and RF performance, examples of device and IC applications, and technology qualification work are presented and serves as a basis for discussing overall technology issues and impact. A relaxed 3-μm emitter-up, self-aligned base ohmic metal (SABM) HBT process and simplified molecularbeam epitaxial profiles are used for near-term producibility. The HBTs have simultaneous fT, fmax≈20–40 GHz and dc current gain ß≈50–100 at collector current density JC=3 kA/cm2 and Early voltage VA≈200–300 with capability for MSI-LSI integration levels. Versatile dc-20 GHz analog, 3–6 Gb/s digital, and 2–3 Gs/s A/D conversion functions are demonstrated with a common 3-μm SABM HBT process which facilitates single-chip multifunctional capability. Key improvements are realized over Si bipolar and GaAs-related FET (e.g. MESFET and HEMT) approaches in operational frequency, gain-bandwidth product, harmonic distortion, 1/f noise, power consumption, and size reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 671
Copyright
Copyright © Materials Research Society 1989

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References

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