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GaAs Devices for Low Loss Power Rectification

Published online by Cambridge University Press:  25 February 2011

L. V. Munukutla ,
S. H. Cheng  and
S. J. Anderson
L. V. Munukutla
Affiliation:
Center for Solid State Electronics Research and Dept. of Electronics and Computer Technology, Arizona State University, Tempe, AZ 85287–6606
S. H. Cheng
Affiliation:
Center for Solid State Electronics Research and Dept. of Electronics and Computer Technology, Arizona State University, Tempe, AZ 85287–6606
S. J. Anderson
Affiliation:
Motorola Inc., 5005 E. McDowell Rd., Phoenix, AZ 85008
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Abstract

High voltage GaAs Schottky rectifiers fabricated using vapor phase epitaxy have been observed to be an order of magnitude higher in switching speeds than silicon. Measured rectifier barrier heights deduced from the I-V and C-V plots were found to be in good agreement with previously reported values. Our experimental results show no correlation between the epilayer thickness and barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 275
Copyright
Copyright © Materials Research Society 1993

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References

BIBLIOGRAPHY

1. Baliga, B.J., IEEE Electron Device Lett. Vol. 10, 445 (1989).Google Scholar
2. Johnson, E.O., RCA Rev. 163 (1965).Google Scholar
3. Crowell, C.R. and Sze, S.M., Solid State Electronics, Vol. 9, 1035 (1966).Google Scholar
4. Sze, S.M. and Gibbons, , Appl. Phys. Lett. 8, 111 (1966)Google Scholar
5. Goodman, A.M., J. Appl. Phys. 54, 922 (1983).Google Scholar
6. Goodman, A.M., J. Appl. Phys. 34, 329 (1963).Google Scholar
7. Anderson, S.J. and Munukutla, L.V., Symposium on Materials and devices for Power Electronics and 4th European Conference on Power Electronics and Applications Proceedings, Florence, Italy, 412–416 (Sept. 1991)Google Scholar
8. Bardeen, J., Phys. Rev. Vol. 71, 717 (1947).Google Scholar
9. Offsey, S.D. et.al., Appl. Phys. Lett. 48, 475 (1987).Google Scholar
10. Schroder, D.K., Semiconductor Materials and Device Characterization, John Wiley & Sons Inc., New York, 1990), p. 132.Google Scholar
11. Monch, W., Gallium Arsenide Technology Volume II. (Howard W. SAMS & Company, 1989), p. 145.Google Scholar