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GaAs Devices for Low Loss Power Rectification

Published online by Cambridge University Press:  25 February 2011

L. V. Munukutla ,
S. H. Cheng  and
S. J. Anderson
L. V. Munukutla
Affiliation:
Center for Solid State Electronics Research and Dept. of Electronics and Computer Technology, Arizona State University, Tempe, AZ 85287–6606
S. H. Cheng
Affiliation:
Center for Solid State Electronics Research and Dept. of Electronics and Computer Technology, Arizona State University, Tempe, AZ 85287–6606
S. J. Anderson
Affiliation:
Motorola Inc., 5005 E. McDowell Rd., Phoenix, AZ 85008
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Abstract

High voltage GaAs Schottky rectifiers fabricated using vapor phase epitaxy have been observed to be an order of magnitude higher in switching speeds than silicon. Measured rectifier barrier heights deduced from the I-V and C-V plots were found to be in good agreement with previously reported values. Our experimental results show no correlation between the epilayer thickness and barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 275
Copyright
Copyright © Materials Research Society 1993

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References

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