Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T09:51:16.462Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs Circuit Restructuring by Multi-Level Laser-Direct-Written Tungsten Process

Published online by Cambridge University Press:  28 February 2011

Jerry G. Black ,
Scott P. Doran ,
Mordechai Rothschild ,
Jan H.C. Sedlacek  and
Daniel J. Ehrlich
Jerry G. Black
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Scott P. Doran
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Mordechai Rothschild
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Jan H.C. Sedlacek
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Daniel J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
Get access

Abstract

Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel interconnections. These combined directwrite processes provide the flexibility of clip-lead prototyping on a micrometer scale.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 651
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ehrlich, D.J., Tsao, J.Y., Silversmith, D.J., Sedlacek, J.H.C., Mountain, R.W., and Graber, W.S., IEEE Electron Device Lett. EDL–5, 32 (1984).Google Scholar
2. Deutsch, T.F., Ehrlich, D.J., Rathman, D.D., Silversmith, D.J., and Osgood, R.M. Jr., Appl. Phys. Lett. 39, 825 (1981).Google Scholar
3. Ehrlich, D.J., Williams, D.F., Sedlacek, J.H.C., Rothschild, M., and Schwartz, S.E. IEEE Electron Device Lett. EDL–8, 110 (1987) ; C.-L. Chen, J.G. Black, L.J. Mahoney, S.P. Doran, W.E. Courtney, and D.J. Ehrlich, Electronics Lett., to be published (1987).CrossRefGoogle Scholar
4. Ehrlich, D.J., Osgood, R.M., and Deutsch, T.F., Appl. Phys. Lett. 39, 957 (1981).Google Scholar
5. McDonald, J.F., Steckl, A.J., Neugebauer, C.A., Carlson, R.O., and Bergendahl, A.S., J. Vac. Sci. Technol. A 4, 3127 (1986).Google Scholar
6. Srinivasan, V., Smrtic, M.A., and Babu, S.V., J. Appl. Phys. 59, 3861 (1986).Google Scholar