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Ga1-xGdxN-Based Spin Polarized Light Emitting Diode

Published online by Cambridge University Press:  21 March 2011

Muhammad Jamil
Affiliation:
Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan
Tahir Zaidi
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Andrew Melton
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Tianming Xu
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Ian T. Ferguson*
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC, 28223, USA
*
*Corresponding author: e-mail: [email protected], Phone: (704) 687-5885
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Abstract

In this work, a room temperature spin-polarized LED based on ferromagnetic Ga1-xGdxN is reported. The device was grown by metalorganic chemical vapor deposition (MOCVD) and is the first report of a spin-LED based on Ga1-xGdxN. Electroluminescence from this device had a degree of polarization of 14.6% at 5000 Gauss and retained a degree of polarization of 9.3% after removal of the applied magnetic field. Ga1-xGdxN thin films were grown on 2 μm GaN templates and were co-doped with Si and Mg to achieve n-type and p-type materials. Co-doping of the Ga1-xGdxN films with Si produced conductive n-type material, while co-doping with Mg produced compensated p-type material. Both Si and Mg co-doped films exhibited room temperature ferromagnetism, measured by vibrating sample magnetometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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