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Ga1-xGdxN-Based Spin Polarized Light Emitting Diode

Published online by Cambridge University Press:  21 March 2011

Muhammad Jamil ,
Tahir Zaidi ,
Andrew Melton ,
Tianming Xu  and
Ian T. Ferguson
Muhammad Jamil
Affiliation:
Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan
Tahir Zaidi
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Andrew Melton
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Tianming Xu
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Ian T. Ferguson*
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC, 28223, USA
*
*Corresponding author: e-mail: [email protected], Phone: (704) 687-5885
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Abstract

In this work, a room temperature spin-polarized LED based on ferromagnetic Ga1-xGdxN is reported. The device was grown by metalorganic chemical vapor deposition (MOCVD) and is the first report of a spin-LED based on Ga1-xGdxN. Electroluminescence from this device had a degree of polarization of 14.6% at 5000 Gauss and retained a degree of polarization of 9.3% after removal of the applied magnetic field. Ga1-xGdxN thin films were grown on 2 μm GaN templates and were co-doped with Si and Mg to achieve n-type and p-type materials. Co-doping of the Ga1-xGdxN films with Si produced conductive n-type material, while co-doping with Mg produced compensated p-type material. Both Si and Mg co-doped films exhibited room temperature ferromagnetism, measured by vibrating sample magnetometry.

Keywords

spintronicmetalorganic depositionGd
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1290: Symposium I – Magnetism and Correlated Electronic Structure of Nitrides—Rare-Earth and Transition Metals as Constituents and Dopants , 2011 , mrsf10-1290-i02-05
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Wolf, S. A., Chtchelkanova, A. Y., and Treger, D. M., Ibm Journal of Research and Development, 50(1), 101 (2006).Google Scholar
2. Ohno, H., Science, 281, 951 (1998).Google Scholar
3. Ohno, Y., Young, D. K., Beschoten, B., Matsukura, F., Ohno, H., and Awschalom, D. D., Nature, 402, 790 (1999).Google Scholar
4. Wang, K. Y., Campion, R. P., Edmonds, K. W., Sawicki, M., Dietl, T., Foxon, C. T., and Gallagher, B. L., 27th International Conference on the Physics of Semiconductors - ICPS-27. 2005. Flagstaff, Arizona (USA).Google Scholar
5. Khoda, M., Ohno, Y., Matsukura, F., and Ohno, H., Physica E, 32, 438 (2006).Google Scholar
6. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science, 287, 1019 (2000).Google Scholar
7. Polyakov, et al. . J. Appl. Phys, 93, 5388 (2003).Google Scholar
8. Mahadevan, P. and Zunger, A., Appl. Phys. Lett. 85, 2860(2004).Google Scholar
9. Dhar, S., Perez, L., Brandt, O., Trampert, A., Ploog, K. H., Keller, J., and Beschoten, B., Physical Review B (Condensed Matter and Materials Physics), 72(24), 245203–1(2005).Google Scholar
10. Hite, J. K., Frazier, R. M., Davies, R., Thaler, G. T., Abernathy, C. R., and Pearton, S. J., Zavada, J. M., , Appl. Phys. Lett. 89, 092119(2006).Google Scholar
11. Zhou, Y. K., Choi, S. W., Emura, S., Hasegawa, S., and Asahi, H., Appl. Phys. Lett., 92, 062505 (2008).Google Scholar
12. Matyi, R. J., Jamil, M., and Shahedipour-Sandvik, F., phys. stat. sol. (a) 204, 2598 (2007).Google Scholar
13. Kane, M. H., Strassburg, M., Asghar, A., Fenwick, W. E., Senawiratne, J., Song, Q., Summers, C. J., Zhang, Z. J., Dietz, N., Ferguson, I. T., Materials Science and Engineering B 126, 230 (2006).Google Scholar