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Fundamentals of Cu/Barrier-Layer Adhesion in Microelectronic Processing

Published online by Cambridge University Press:  01 February 2011

Harsono Simka
Affiliation:
Technology CAD Department – Logic Technology Development
Sadasivan Shankar
Affiliation:
Technology CAD Department – Logic Technology Development
Carolyn Duran
Affiliation:
Storage Technologies Group, Technology and Manufacturing Group, Intel Corporation, 2200 Mission College Blvd., SC12-205, Santa Clara, CA 95052, U.S.A.
Michael Haverty
Affiliation:
Technology CAD Department – Logic Technology Development
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Abstract

Copper is most widely used interconnect material in present silicon microelectronic technologies. As such, multiple interfaces formed by a thin Cu layer and other materials must be engineered to achieve the desired chemical, mechanical, and electrical properties. Adhesion between Cu and the barrier layer, as well as between Cu and the dielectric, is of particular interest, due to its role in controlling interfacial stability and Cu electromigration behavior [1]. This work focuses on understanding how the interface chemistry affects adhesion. Firstprinciples density functional theory (DFT) calculations were used to determine chemical adhesion energies of interfaces formed by Cu and various metals considered as a diffusion barrier, including Ta, TiN, and W. Calculations predicted increasing adhesion strength in the order of TiN < Si-doped TiN < TaN < Ta, consistent with wetting experiments done using 100Å thick Cu layer samples. The effects of doping at the interface using light elements (C, N, O) were also determined. Calculations were also done for interfaces of Cu with two different classes of amorphous dielectric materials, i.e. silicon nitride and silicon carbide, for which detailed material characterizations are often difficult and time consuming. Calculations predicted Cu/Si-nitride and Cu/Si-carbide adhesion strengths consistent with 4-pt-bend experiments, including the improvement in adhesion energies when silicon was used to dope the interface. In addition, weaker interfaces provide low-resistance diffusion paths for Cu atoms during electromigration. The first-principles based modeling, validated by select adhesion measurements, provides a predictive approach to effectively determine adhesion strengths and predict electromigration reliability in interconnects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1. Lane, M.W., Liniger, E.G., and Lloyd, J.R., J. Appl. Phys. 93, 14171421 (2003).Google Scholar
2. Kresse, G. and Hafner, J., Phys. Rev. B: Condens. Matter. 48, 13115 (1993).Google Scholar
3. Kresse, G. and Furthmuller, J., J. Comput. Mater. Sci. 6, 15 (1996).Google Scholar
4. Kresse, G. and Furthmuller, J., Phys. Rev. B: Condens. Matter. 54, 11169 (1996).Google Scholar
5. Perdew, J.P. and Yue, W., Phys. Rev. B: Condens. Matter. 45, 13244 (1992).Google Scholar
6. Vanderbilt, D., Phys. Rev. B: Condens. Matter. 41, 7892 (1990).Google Scholar
7. Methfessel, M., and Paxton, A.T., Phys. Rev. B: Condens. Matter. 40, 3616 (1989).Google Scholar
8. Vaz, F., Rebouta, I., da Silva, R.M.C., and Silva, M. da, Vacuum 52, 209214 (1999).Google Scholar
9. Zhou, Y., Scherban, T., Xu, G., He, J., Miner, B., Jan, C.H., Ott, A., O'Loughlin, J., Ingerly, D., and Leu, J. in Advanced Metallization Conference 2004, edited by Erb, D., Ramm, P., Masu, K., Osaki, A., (Mater. Res. Soc. Proc. V20, Warrendale, PA, 2004) pp. 189200.Google Scholar