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Fully Atomistic Analysis of Diffuse X-Ray Scattering Spectra of Silicon Defects

Published online by Cambridge University Press:  15 February 2011

K. Nordlund ,
P. Partyka  and
R. S. Averback
K. Nordlund
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
P. Partyka
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
R. S. Averback
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, IL 61801, USA
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Abstract

Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 199
Copyright
Copyright © Materials Research Society 1997

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References

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