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Fullerene-Incorporated Nanocomposite Resist System for Nanolithograpy

Published online by Cambridge University Press:  10 February 2011

T. Ishii ,
H. Nozawa ,
E. Kuramochi  and
T. Tamamura
T. Ishii
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan, [email protected]
H. Nozawa
Affiliation:
NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
E. Kuramochi
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan, [email protected]
T. Tamamura
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan, [email protected]
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Abstract

A nanocomposite resist system that incorporates sub-nm fullerene molecules ( C60 and/or C70) into a conventional resist material is proposed for nanolithograpy. Fullerene has physically and chemically resistant characteristics, and its incorporation reinforces the original resist film, leading to substantial improvements in resist performance: etching resistance, pattern contrast, mechanical strength and thermal resistance. We have prepared a system composed of a positive-type electron beam resist, ZEP520, and C60 or a C60/C70 mixture and through the fabrication of high electron mobility transistors (HEMTs), X-ray masks, and groove-grating mirrors for lasers with nanometer dimensions confirmed improved resist performance, particularly resolution improvements due to enhanced etching resistance. By making use of a characteristic unique to the nanocomposite, which is that sensitivity readily changes with the fullerene content due to a dissolution inhibiting effect of fullerene, we have constructed a fullerene-incorporated bilayer resist system for a lift-off process and have successfully fabricated a highly-ordered array of self-organized boxlike nanostructures and a mold for nanoprinting. Further, solubility enhancement by fullerene derivatives has been examined for a higher degree of fullerene incorporation and better sensitivity characteristics in future nanocomposite resist systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 103
Copyright
Copyright © Materials Research Society 2000

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