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From the Mystery to the Understanding of the Self-Interstitials in Silicon

Published online by Cambridge University Press:  15 February 2011

W. Frank ,
A. Seeger  and
U. Gösele
W. Frank
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, and Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57, D-7000 Stuttgart 80, Germany
A. Seeger
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstr. 1, and Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57, D-7000 Stuttgart 80, Germany
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Abstract

Our present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 31
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Watkins, G. D., in: Radiation Damage in Semiconductors, Baruch, P. ed. (Dunod, Paris 1964) p. 97.Google Scholar
2. Watkins, G. D., in: Lattice Defects in Semiconductors 1974, Huntley, F. A. ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, p. 1.Google Scholar
3. Brower, K. L., Phys. Rev. B 1, 1908 (1970).Google Scholar
4. McKeighen, R. E. and Koehler, J. S., Phys. Rev. B 4, 462 (1971).Google Scholar
5. Gwozdz, P. S. and Koehler, J. S., Bull. Am. Phys. Soc. 17, 307 (1972).Google Scholar
6. Arimura, J. and MacKay, J. W., in: Radiation Effects in Semiconductors, Vook, F. L. ed. (Plenum Press, New York 1968) p. 204.Google Scholar
7. Hyatt, W.D. and Koehler, J. S., Phys. Rev. B 4, 1903 (1971).Google Scholar
8. Seeger, A. and Chik, K.P., phys. stat. sol. 29, 455 (1968).Google Scholar
9. Seeger, A., Rad. Effects 9, 15 (1971).Google Scholar
10. Seeger, A. and Frank, W., in: Radiation Damage and Defects in Semiconductors, Whitehouse, J. E. ed. (Institute of Physics, London and Bristol 1972) p. 262.Google Scholar
11. Frank, W., in: Lattice Defects in Semiconductors 1974, Huntley, F. A. ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, p. 23.Google Scholar
12. Seeger, A., Föll, H. and Frank, W., in: Radiation Effects in Semiconductors 1976, Urli, N. B. and Corbett, J. W. eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 12.Google Scholar
13. Seeger, A., Frank, W. and Gösele, U., in: Defects and Rad. Effects in Semiconductors 1978, Albany, J. H. ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46,p. 148.Google Scholar
14. James, H. M. and Lark-Horovitz, K., Z. Phys. Chem. (Leipzig) 198, 107 (1951).Google Scholar
15. Blount, E. I., J. Appl. Phys. 30, 1218 (1959).Google Scholar
16. Watkins, G. D., Messmer, R. P., Weigel, C., Peak, D. and Corbett, J. W., Phys. Rev. Lett. 27, 1573 (1971).CrossRefGoogle Scholar
17. Hettich, G., Mehrer, H. and Maier, K., in: Defects and Radiation Effects in Semiconductors 1978, Albany, J. H. ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 500.Google Scholar
18. McVay, G. L. and DuCharme, A. R., in: Lattice Defects in Semiconductors 1974, Huntley, F. A. ed. (Institute of Physics, Bristol and London 1975), Inst. Phys. Conf. Ser. No. 23, p. 91.Google Scholar
19. Shaw, D., phys. stat. sol. (b) 72, 11 (1975).CrossRefGoogle Scholar
20. van Vechten, J. A. and Thurmond, C. D., Phys. Rev. B 14,3551 (1976).CrossRefGoogle Scholar
21. Fair, R. B., in: Semiconductor Silicon 1977, Huff, H. R. and Sirtl, E. eds. (Electrochemical Society, Princeton 1977) p. 968.Google Scholar
22. Watkins, G. D., Troxell, J. R. and Chatterjee, A. P., in: Lattice Defects in Semiconductors 1978, Albany, J. H. ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 16.Google Scholar
23. Hu, S. M., J. Appl. Phys. 45, 1567 (1974).Google Scholar
24. Hu, S. M., J. Vac. Sci. Technol. 14, 17 (1977).CrossRefGoogle Scholar
25. Sirtl, E., in: Semiconductor Silicon 1977, Huff, H. R. and Sirtl, E. eds. (Electrochemical Society,Princeton, 1977) p. 4.Google Scholar
26. Tan, S. I., Berry, B. S. and Frank, W., in: Ion Implantation in Semiconductors and Other Materials, Crowder, B. L. ed. (Plenum Press, New York and London 1973) p. 19.Google Scholar
27. Frank, W., Gösele, U. and Seeger, A., in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.Google Scholar
28. Mayer, H. J., Mehrer, H. and Maier, K., in: Radiation Effects in Semiconductors 1976, Urli, N. B. and Corbett, J. W. eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 186.Google Scholar
29. Jonscher, A. K., Principles of Semiconductor Device Operation (Wiley, New York 1960).Google Scholar
30. Bernewitz, L. J. and Mayer, K. R., phys. stat. sol. (a) 16, 579 (1973).Google Scholar
31. Kock, A. J. R. de, Phillips Res. Rep., Suppl. 4, 1 (1973).Google Scholar
32. Föll, H. and Kolbesen, B. O., Appl. Phys. 8, 319 (1975).CrossRefGoogle Scholar
33. Petroff, P. M. and Kock, A. J. R. de, J. Cryst.Growth 30, 117(1975).Google Scholar
34. Föll, H., Kolbesen, B. O. and Frank, W., phys. stat. sol. (a) 29, K 83 (1975).CrossRefGoogle Scholar
35. Kimerling, L. C., in: Defects and Radiation Effects in Semiconductors 1978, Albany, J. H. ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p.5 Google Scholar
36. Bourgoin, J. C. and Corbett, J. W., Rad.Effects 36, 157 (1978).CrossRefGoogle Scholar
37. Gösele, U., Frank, W. and Seeger, A., in: Defects and Radiation Effects in Semiconductors 1978, Albany, J. H. ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 538.Google Scholar
38. Seeger, A. and Mehrer, H., in: Vacancies and Interstitials in Metals, Seeger, A., Schumacher, D., Schilling, W. and Diehl, J. eds. (North-Holland, Amsterdam 1970) p. 1.Google Scholar
39. Mehrer, H., J. Nuclear Materials 69/70, 38 (1978).Google Scholar
40. Troxell, J. R., Chatterjee, A. P., Watkins, G. D. and Kimerling, L. C., Phys. Rev. B 19, 5 336 (1979).Google Scholar
41. Kimerling, L. C. and Lang, D. V., in: Lattice Defects in Semiconductors 1974, Huntley, F. A. ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No.23, page 589.Google Scholar
42. Weeks, J. D., Tully, J. C. and Kimerling, L. C., Phys. Rev. B. 12, 3286 (1975).CrossRefGoogle Scholar
43. Bourgoin, J. C. and Corbett, J. W., Phys. Lett. 38A, 135 (1972).CrossRefGoogle Scholar
44. Troxell, J. R. and Watkins, G. D., Phys. Rev. B 22, 921 (1980).Google Scholar
45. Masters, B. J. and Gorey, E. F., J. Appl. Phys. 49, 2717 (1978).Google Scholar
46. Lomer, W. M., Harwell Report 1540 (AERE, Harwell 1954).Google Scholar
47. Dienes, J.G. and Damask, A. C., J. Appl. Phys. 29, 1713 (1958).Google Scholar
48. Sizmann, R., J. Nuclear Material 69/70, 386 (1978).Google Scholar
49. Baruch, P., Monnier, J., Blanchard, B. and Castaing, C., Appl. Phys. Lett. 26, 77 (1975).CrossRefGoogle Scholar
50. Baruch, P., in: Radiation Effects in Semiconductors 1976, Urli, N. B. and Corbett, J. W. eds. (Institue of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 126 (1977).Google Scholar
51. Akutagawa, W., Dunlop, H. L., Hart, R. and Marsh, O. J., J. App. Phys. 50, 777 (1979).Google Scholar
52. Okamoto, P. R. and Rehn, L. E., J. Nuclear Materials 83, 2 (1979).CrossRefGoogle Scholar
53. Gösele, U. and Strunk, H., Appl. Phys. 20, 265 (1979).CrossRefGoogle Scholar
54. Seitz, F., Acta Cryst. 3, 355 (1950).CrossRefGoogle Scholar
55. Nelson, D. G., Gibbson, J. F. and Johnson, W. S., Appl. Phys. Lett. 15, 246 (1969).Google Scholar
56. Gamo, K., Masuda, K., Namba, S., Ishihara, S. and Kimura, I., Appl. Phys. Lett. 17, 391 (1970).CrossRefGoogle Scholar
57. Allen, W. G., Sol. State Electr. 16, 709 (1973).Google Scholar
58. Antoniadis, D. A., Gonzalez, A. G. and Dutton, R. W., J. Electrochem. Soc. 127, 2243 (1980).Google Scholar
59. Nickolas, K. H., Sol. State Electr. 9, 35 (1966).Google Scholar
60. Masetti, G., Solmi, S. and Soncini, G., Sol. State Electr. 16, 1419 (1973).CrossRefGoogle Scholar
61. Masetti, G., Solmi, S. and Soncini, G., Phil. Mag. 33, 613 (1976).Google Scholar
62. Francis, R. and Dobson, P. S., J. Appl Phys. 50, 280 (1979).Google Scholar
63. Antonidis, D. A., Lin, A. M. and Dutton, R. W., Appl. Phys. Lett. 33, 1030 (1978).CrossRefGoogle Scholar
64. Hu, S. M., in: Diffusion in Semiconductors, Shaw, D. ed. (Plenum Press, London 1973) p. 217.CrossRefGoogle Scholar
65. Willoughby, A. F. W., Rep. Prog. Phys. 41, 1665 (1978).Google Scholar
66. Willoughby, A. F. W., J. Phys. D 10, 455 (1977).Google Scholar
67. Gösele, U. and Frank, W., in these proceedings.Google Scholar
68. Leroy, B., J. Appl. Phys. 50, 7996 (1979).CrossRefGoogle Scholar
69. Claeys, C. L., Declerck, G. J. and Overstraeten, R. J. van, in: Semiconductor Characterization Techniques, Barnes, P. A. and Rozgonyi, G. A. eds. (Electrochemical Society, Princeton 1978) p. 366.Google Scholar
70. Wilcox, W. R. and LaChapelle, T. J., J. Appl. Phys. 35, 240 (1964).CrossRefGoogle Scholar
71. Wilcox, W. R., LaChapelle, T. J. and Forbes, D. H., J. Electro chem. Soc. 111, 1377 (1964).Google Scholar
72. Hill, M. J., Lietz, M., Sittig, R., Frank, W., Gösele, U. and Seeger, A., in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.Google Scholar
73. Sprokel, G. J. and Fairfield, J. M., J. Electrochem. Soc. 112, 200 (1965).Google Scholar
74. Lambert, J. L., Wiss. Ber. AEG-Telefunken 45, 153 (1972).Google Scholar
75. Dash, W. C., J. App. Phys. 31, 2275 (1960).Google Scholar
76. Huntley, F. A. and Willoughby, A. F. W., Solid-State Electronics 13, 1231 (1970).CrossRefGoogle Scholar
77. Huntley, F. A. and Willoughby, A. F. W., J. Electrochem. Soc. 120, 414 (1973).Google Scholar
78. Huntley, F. A. and Willoughby, A. F. W., Phil. Mag. 28, 1319 (1973).Google Scholar
79. Frank, F. C. and Turnbull, D., Phys. Rev. 104, 617 (1956).Google Scholar
80. Gösele, U., Frank, W. and Seeger, A., Appl. Phys. 23, 361 (1980).Google Scholar
81. Seeger, A., phys. stat. sol. (a) 61, 521 (1980).Google Scholar
82. Sturge, M. D., Proc. Phys. Soc. (Lond.) 73, 297 (1959).Google Scholar
83. Seeger, A. and Frank, W., to be published.Google Scholar
84. Meyberg, W., unpublished.Google Scholar
85. Bullis, W. M., Solid-State Electronics 9, 143 (1966).Google Scholar