Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:23:22.781Z Has data issue: false hasContentIssue false

Fracture Toughness of Silicon and Thin Film Micro-structures by Wedge Indentation

Published online by Cambridge University Press:  15 February 2011

M.P. de Boer
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
He Huang
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J.C. Nelson
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Z.P. Jiang
Affiliation:
Dept of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
W.W. Gerberich
Affiliation:
Dept of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

Silicon rooftop structures 30 µm high and of 1 µm linewidth were fabricated in a microelectronics facility using anistropic KOH etching. Aluminum-1% silicon was sputter-deposited to investigate the effects of a ductile thin film on the fracture toughness of a brittle material. The rooftop structures were indented by a Knoop indenter purposely placed off-center so that the indenter was wedge-shaped. Deformation and cracks were photographed by SEM. Crack threshold load per unit width are reported for normal cracks, running perpendicular to the roofline. Fracture toughness is calculated by first order approximation and finite element modeling using SEM measurements of the length of normal cracks. Without a thin film, values for silicon are in reasonable agreement with the literature. With a thin film of only 600 Å, fracture toughness is increased by 45%. Cracks nearly parallel to the roofline also appeared at higher load values. Characteristics of both types of cracks are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Anstis, G. R., Chantikul, P., Lawn, B. R., and Marshall, D. B., J. Am. Cer. Soc., 64, 533 (1981).Google Scholar
2 Lambropoulos, J. C., J. Vac. Sci. Technol. A., 9, 2503 (1991).Google Scholar
3 Kobrin, P. H. and Harker, A. B., Journal of Materials Science, 24, 1363 (1989).Google Scholar
4 Cook, R. F. and Pharr, G.M., J. Am. Ceram. Soc. 73, 787 (1990).Google Scholar
5 Binary Alloy Phase Diagrams, edited by Massalski, T. B., (ASM International, Materials Park, OH, 1990).Google Scholar
6 Fraser, D. B., in VLSI Technology, edited by Sze, S.M., (McGraw-Hill, New York, 1983), p. 367.Google Scholar
7 Hartshough, L. D. and Denison, D. R., "Aluminum-Silicon Sputter Deposition," Technical Report #79.01, Perkin-Elmer Division, Palo Alto, CA 94043.Google Scholar
8 Wu, T. W., J. Mater. Res., 6, 407 (1991).Google Scholar
9 Pharr, G. M., Oliver, W. C., and Clarke, D. R., J. Elec. Mater., 19, 881 (1990).CrossRefGoogle Scholar
10 Hetherington, C. J. D., in High Resolution Electron Microscopy of Defects in Materials, edited by Sinclair, R., Smith, D. J., and Dahmen, U., (Mater. Res. Soc. 183, Pittsburgh, PA, 1990) p. 123.Google Scholar
11 Page, T. F., Oliver, W. C., and McHargue, C. J., J. Mater. Res., 7, 450 (1992).Google Scholar
12 Sih, G. C., in Handbook of Stress Intensity Factors. (Institute of Fracture and Solid Mechanics, Lehigh Univ., Bethlehem, PA, 1973) p. 1.3.15.Google Scholar
13 Cotterell, B., Kamminga, J., and Dickson, F. P., Int. J. Fract., 29, 205 (1985).Google Scholar
14 Evans, A. G., Drory, M. D., and Hu, M. S., J. Mater. Res. 3 (5), 1043, 1988.CrossRefGoogle Scholar
15 Gallagher, R. H., in Numerical Methods in Fracture Mechanics. Proc. 1st Int'l Conf., Swnsea, 1(1978).Google Scholar
16 Parks, D. M., Int'l J. Fracture, 10, 487(1974).Google Scholar
17 ABAQUS User's Manual 5.2, Hibbitt, Karlsson & Sorensen, Inc., 1992.Google Scholar