Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:03:01.236Z Has data issue: false hasContentIssue false

Fracture Properties of Porous MSSQ Films: Impact of Porogen Loading and Burnout

Published online by Cambridge University Press:  01 February 2011

Markus D Ong
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 1033 Crestview Dr Apt 216, Mountain View, California, 94040, United States, (650) 723-3268
Vincent Jousseaume
Affiliation:
[email protected], CEA-LETI, Grenoble, N/A, N/A, France
Sylvain Maitrejean
Affiliation:
[email protected], CEA-LETI, Grenoble, N/A, N/A, France
Reinhold H. Dauskardt
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, Stanford, CA, 94305, United States
Get access

Abstract

This work investigates the effect of porogen loading on the fracture properties of methylsilsesquioxane (MSSQ) both before and after the porogen burnout process. The fracture behavior of the hybrid porogen/matrix materials differed significantly from that of the post-burnout materials. The most notable differences were alternative fracture paths and a trend of increasing fracture energy with increasing porogen loading. Characterization of the fracture surfaces indicate increasing amounts of carbon at the fracture interface corresponding to the increases in fracture energy and suggest bridging porogen molecules may be responsible for the increase in adhesion for the hybrid materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ciaramella, F., Jousseaume, V., Maitrejean, S., Remiat, B., Verdier, M., and Passemard, G. in Materials, Technology, and Reliability of Advanced Interconnects—2005, edited by Besser, Paul R., McKerrow, Andrew K., Iacopi, Francescsa, Wong, C.P., and Vlassak, Joost (Mater. Res. Soc. Symp. Proc. 863, Warrendale, PA, 2005), B1.4.Google Scholar
[2] Hedrick, J.L., Miller, R.D., Hawker, C.J., Carter, K.R.. Volksen, W., Yoon, D.Y., and Trollsas, M., Adv. Mater. 10, 1049 (1998).Google Scholar
[3] Liu, J., Gan, D., Hu, C., Kiene, M., Ho, P.S., Volksen, W., and Miller, R.D.. Appl. Phys. Lett. 81, 41804182 (2002)Google Scholar
[4] Maidenberg, D.A., Volksen, W., Miller, R.D., and Dauskardt, R.H. in Advances in Low-k Dielectrics and Thermally stable Polymers for Microelectronics, edited by Sachdev, H.S., Khojasteh, M.M., and McHerron, D., (IEEE, 1-5 June, Burlingame, CA, 2003), 4850.Google Scholar
[5] Maidenberg, D.A., Volksen, W., Miller, R.D., and Dauskardt, R.H.. Nature Materials 3, 464469 (2004).Google Scholar
[6] Charalambides, P.G., Lund, J., Evans, A.G., and McMeeking, R.M., J. Appl. Mech. 56, 7782 (1989).Google Scholar
[7] Dauskardt, R.H., Lane, M., Ma, Q., and Krishna, N., Eng. Fract. Mech. 61, 141162 (1998).Google Scholar
[8] Kannien, M.F., Int. J. Fract. 9, 8392 (1978).Google Scholar