Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-07T02:14:06.687Z Has data issue: false hasContentIssue false
  • English
  • Français

Fracture of Thin Tantalum Nitride Films on Ain Substrates

Published online by Cambridge University Press:  15 February 2011

N. R. Moody ,
D. Medlin  and
D. P. Norwood
N. R. Moody
Affiliation:
Sandia National Laboraties, Livermore, CA 94551–0969
D. Medlin
Affiliation:
Sandia National Laboraties, Livermore, CA 94551–0969
D. P. Norwood
Affiliation:
Sandia National Laboraties, Albuquerque, NM, 87185
Get access

Abstract

Nanoindentation, continuous nanoscratch testing, and transmission electron microscopy were used in this study to determine the structure-property relationships of thin tantalum nitride resistor films on aluminum nitride substrates. The films were sputter-deposited to a nominal thickness of 200 nm during one production run and then tested at room temperature. Most films were uniform in structure and thickness, consisting of fine equiaxed crystallites along the film-substrate interfaces and long columnar grains further away from the interface. However, one film varied greatly in thickness across the substrate. It had large crystallites along the film-substrate interface and clusters of columnar grains. Most importantly, it contained a far greater amount of porosity than the other films. The high porosity content led to significantly lower elastic moduli and hardness values than the low porosity films and a much greater susceptibility to fracture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 97
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Adams, J. R. and Kramer, D. K., Surface Science, 56, 486 (1976).Google Scholar
2. Au, C. L., Anderson, W. A., Schmitz, D. A., Flassayer, J. C., and Collins, F. M., J. Mater. Res., 5, 1224 (1990).Google Scholar
3. Garrou, P., Advancing Microelectronics, 21, 6 (1994).Google Scholar
4. Palmer, R. H., Advancing Microelectronics, 21, 11 (1994).Google Scholar
5. Doemer, M. F. and Nix, W. D., J. Mater. Res., 1, 601 (1986).Google Scholar
6. Nix, W. D., Metall. Trans. A, 20A, 2217 (1989).Google Scholar
7. Oliver, W. C. and Pharr, G. M., J. Mater. Res., 7, 1564 (1992).Google Scholar
8. Venkataraman, S. K., Kohlstedt, D. L., and Gerberich, W. W., J. Mater. Res., 8, 685 (1993).Google Scholar
9. Wu, T. W., Hwang, C., Lo, J., and Alexopoulos, P. S., Thin Solid Films, 166, 299 (1988).Google Scholar
10. Wu, T. W., J. Mater. Res, 6, 407, (1991).Google Scholar
11. Venkataraman, S. K., Kohstedt, D. L., and Gerberich, W. W., J. Mater. Res., 7, 1126 (1992).Google Scholar
12. Venkataraman, S. K., Kohlstedt, D. L., and Gerberich, W. W., Thin Solid Films, 223, 269 (1993).Google Scholar
13. Binary Alloy Phase Diagrams, 2nd Edition, edited by Massalski, T. B. (ASM International, Metals Park, OH, 1990).Google Scholar
14. Moody, N. R., Venkataraman, S., Nelson, J., Worobey, W., and Gerberich, W. W., in Covalent Ceramics II, edited by Barron, A. R., Fischman, G. S., Fury, M. A., and Hepp, A. F. (MRS, Pittsburgh, PA, vol.327, 1994) pp. 337–342.Google Scholar
15. Moody, N. R., unpublished research, Sandia National Laboratories, Livermore, CA, 94551- 0969, 1996.Google Scholar
16. Moody, N. R., Venkataraman, S. V., Nelson, J. C., Worobey, W., and Gerberich, W. W., in Polycrystalline Thin Films: Structure, Texture, Properties, and Applications, edited by Barmak, K., Parker, M. A., Floro, J. A., Sinclair, R., and Smith, D. A. (MRS, Pittsburgh, PA, vol.343, 1994) pp. 603–608.Google Scholar
17. Angelo, J. E., Moody, N. R., Venkataraman, S. K., and Gerberich, W. W., in Structure and Properties of Defects in Ceramics, edited by Bonell, D. A., Ruhle, M. and Chowdhry, U. (Mater. Res. Soc. Proc. 357, Pittsburgh, PA, 1995) pp. 195–200.Google Scholar