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Fourier Transform Infrared Spectroscopy Characterization of AlN Thin Films Grown on Sacrificial Silicon Oxide Layers via Metal Organic Vapor Phase Expitaxy

Published online by Cambridge University Press:  31 January 2011

Sridhar Kuchibhatla ,
L.E. Rodak  and
D Korakakis
Sridhar Kuchibhatla
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, PO BOX 6109, Morgantown, West Virginia, 26506, United States
L.E. Rodak
Affiliation:
[email protected], West Virginia University, Lane Dept. of Computer Science and Electrical Engineering, PO Box 6109, Morgantown, West Virginia, 26506, United States
D Korakakis
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
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Abstract

Aluminum Nitride (AlN) films were grown using Metal Organic Vapor Phase Epitaxy (MOVPE) techniques on Si (111) substrates patterned with SiOx stripes and the vibrational properties of these films were investigated by Fourier transform infrared (FTIR) techniques. The grown films contained a predominantly wurtzite AlN phase in addition to oxidized aluminum and mixed AlN phases. The AlN film on amorphous silicon oxide (SiOx) was prone to corrosion when subjected to wet etching in buffered hydrofluoric acid solution thereby changing the material properties of the AlN film on SiOx. The etching process significantly reduced the oxidized aluminum phase and mixed AlN phases.

Keywords

III-Vinfrared (IR) spectroscopymetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD02-28
Copyright
Copyright © Materials Research Society 2010

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References

[1] Cimalla, V. Pezoldt, J. Ambacher, O. J. Phys. D: Appl. Phys. 40 (2007) 6386–6434.Google Scholar
[2] Turner, R.C. Fuierer, P.A. Newnham, R.E. Shrout, T.R. Appl. Acoust. 41 (1994) 299–324.Google Scholar
[3] Iborra, E. Olivares, J. Clement, M. Vergara, L. Sanz-Hervas, A., Sangrador, J. Sens. Actuator. A115 (2-3) (2004) 501–507.Google Scholar
[4] Olivares, J. Clement, M. Iborra, M. Vergara, E. Sánchez-Rojas, L., Vázquez, J.L., Sanz, P. Proc. SPIE – The Internatl. Soc. Opt. Engg, Smart. Sens, Actuator and MEMS II, 5836 (2005) 16–26.Google Scholar
[5] Katona, T. Cantu, P. Keller, S. Wu, Y. Speck, J. DenBaars, S. Appl. Phys. Lett. 84 (2004) 5025–5027.Google Scholar
[6] Tanaka, S. Kawaguchi, Y. Yamada, K. Sawaki, N. Hibino, M. Hiramatsu, K. Proc. Internatl Workshop on Nitride. Semi (2000) 300–3.Google Scholar
[7] Rodak, L.E. Kuchibhatla, Sridhar, Korakakis, D. Mater. Lett. 63 (2009) 1571–1573.Google Scholar
[8] Kato, Y. Kitamura, S. Hiramatsu, K. Sawaki, N. J. Crys. Growth 144 (1994) 133–40.Google Scholar
[9] Prokofyeva, T. Seon, M. Vanbuskirk, J. Holtz, M. Nikishin, S.A. Faleev, N.N. Temkin, H. Zollner, S. Phys. Rev. B63 (2001) 125313–1-7Google Scholar
[10] Ibanez, J. Hernandez, S. Alarcon-Llado, E., Cusco, R. Artus, L. Novikov, S.V. Foxon, C.T. Calleja, E. J. Appl. Phys. 104 (2008) 033544–1-7.Google Scholar
[11] Chowdhuri, A.R. Takoudis, C. G. Klie, R. F. Browning, N. D. Appl. Phys. Lett. 80 (2002) 4241.Google Scholar
[12] Sanz-Hervas, A., Iborra, E. Clement, M. Sangrador, J. Aguilar, M. Diam. Rela. Mater. 12 (2003) 1186–9.Google Scholar
[13] Lebedev, V. Kaiser, U. Foerster, C. Pezoldt, J. Biskupek, J. Ambacher, O. J. Appl. Phys. 97 (2005) 114306–1-6.Google Scholar
[14] Iborra, E. Clement, M. Vergara, L. Sanz-Hervas, A., Olivares, J. Sangrador, J. Appl. Phys. Lett. 88 (2006) 231901–1-3.Google Scholar
[15] Akiyama, M. Kamohara, T. Kano, K. Teshigahara, A. Kawahara, N. App. Phys. Lett. 93 (2008) 021903–1-3.Google Scholar