Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:40:18.180Z Has data issue: false hasContentIssue false
  • English
  • Français

Fourier Transform Infrared (FTIR) Analysis of Copper Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD)

Published online by Cambridge University Press:  25 February 2011

Yu-Neng Chang
Yu-Neng Chang*
Affiliation:
Department of Chemical EngineeringIowa State University, Ames, IA 50011
Get access

Abstract

FTIR results from cuprous oxide (Cu2O) and cupric oxide (CuO) films prepared by MOCVDtechnique were presented. According to FTIR and XRD results, Cu2O films can be prepared by MOCVD using 0.20 tort of copper acetylacetonate (Cu(acac)2) vapor and 150 torn of oxygen, at a deposition temperature of 340°C. The strong reductive tendency of Cu(acac)2 vapor in the MOCVD process is noted, as the oxidation state of copper was reduced from 2+ in Cu(acac)2 to 1+ in the Cu2O film. Cu2O films have a strong IR absorption band at 610 cm−1. CuO films were prepared at 0.20 tort of Cu(acac)2 vapor and 190 torr of oxygen, at a deposition temperature of 420°C. The IR bands of CuO films located at 440 cm−1, 480cm−1, and 540cm−1. The XRD results indicated that Cu2O films have a preferential orientation at (111) plane. From IR study, it appears that the MOCVD processing condition has an impact on the film microstructure, which in term influenced the band position and band shape of corresponding IR bands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 293: Symposium U – Solid State Ionics III , 1992 , 443
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dawson, P., Hargreave, M.M., and Wilkinson, G.R., J. Phys. Chem. Solids, 34, 2201 (1973).Google Scholar
2. Compaan, A. and Cummins, H.Z., Phys. Rev. B6, 4753 (1972).Google Scholar
3. Chrzanowski, J. and Irwin, J.C., Solid State Commun., 70, 11 (1989).Google Scholar
4. Santra, K., and Sarkar, C.K., Thin Solid Films, 213, 226 (1992)Google Scholar
5. Chang, Y. and Schrader, G.L., Mater. Res. Soc. Symp. Proc. 250, 231 (1992)Google Scholar
6. Pliskin, W.A. and Lehman, H.S., J. Electrochem. Soc., 112, 1013 (1965).Google Scholar
7. Marksteiner, P., Blaha, P., and Schwarz, K., Z. Phys. B64, 119 (1986).Google Scholar
8. Taylor, J.C.W., and Weichman, F.L., Cand. J. Phys., 49, 601 (1971).Google Scholar
9. Forsyth, J.B., Brown, P.J., and Wanklyn, B.M., J. Phys. C: Solid State Phys. 21, 2917 (1988).Google Scholar
10. Hagemann, H., and Bill, H., Solid State Commun., 73, 447 (1990).Google Scholar
11. Fujii, T. and Anno, T., Jap. J. Appl. Phys., 30, 1248 (1991).Google Scholar
12. Chang, Y. and Schrader, G.L., “Gas Phase Products from the Copper Oxide MOCVD Process Studied by in-situ FTIR”, 16th State of the Art Program on Compound Semiconductor. published by the Electrochemical Society Inc., 199Google Scholar