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Four Stable Magnetization States Formed in the Single Layer of GaMnAs Ferromagnetic Film

Published online by Cambridge University Press:  31 January 2011

Sanghoon Lee ,
X. Liu  and
J. K. Furdyna
Sanghoon Lee
Affiliation:
[email protected], Korea UNiversity, 5Ga Anamdong, Seoul, Seoul, 136-713, Korea, Republic of
X. Liu
Affiliation:
[email protected], University of Notre Dame, Physics, Notre Dame, Indiana, United States
J. K. Furdyna
Affiliation:
[email protected], University of Notre Dame, Physics, Notre Dame, Indiana, United States
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Abstract

A GaMnAs ferromagnetic semiconductor film under compressive strain has strong biaxial in-plane anisotropy, which generates four stable magnetization directions at a zero magnetic field. This feature results in a double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor scan of PHR measurement exhibited staggered asymmetric loops due to the formation of the stable muti-domain structures. We demonstrated the observed four stable PHR states can be served as quaternary logic states for spin memory device.

Keywords

Hall effectmagnetoresistance (transport)molecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1183: Symposium FF – Novel Materials and Devices for Spintronics , 2009 , 1183-FF05-09
Copyright
Copyright © Materials Research Society 2009

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References

1 Daughton, J. M., Pohm, A. V., Fayfield, R. T. and Smith, C. H., J. Phys. D: Appl. Phys. 32 R169 (1999).Google Scholar
2 Zhu, Jian-Gang, Zheng, Youfeng, and Prinz, Gary A., J. Appl. Phys. 87, 6668 (2000).Google Scholar
3 Wang, Jhigang and Nakamura, Yoshihisa, J. Appl. Phys. 79, 6639 (1996).Google Scholar
4 Welp, U., Vlasko-Vlasov, V. K., Liu, X., Furdyna, J. K., and Wojtowicz, T., Phys. Rev. Lett. 90, 167206 (2003).Google Scholar
5 Tang, H. X., Kawakami, R. K., Awschalom, D. D., and Roukes, M. L., Phys. Rev. Lett. 90, 107201 (2003).Google Scholar
6 Holleitner, A. W., Knotz, H., Myers, R. C., Gossard, A. C., and Awschalom, D. D., Appl. Phys. Lett. 85, 5622 (2004).Google Scholar
7 Wang, K. Y., Edmonds, K. W., Campion, R. P., Zhao, L. X., Foxon, C. T., and Gallagher, B. L., Phys. Rev. B 72, 085201 (2005).Google Scholar
8 Tang, H. X., Masmanidis, S., Kawakami, R. K., Awschalom, D. D., and Roukes, M. L., Nature 431, 52 (2004).Google Scholar
9 Okamoto, K., J. Magn. Magn. Mater. 35, 353 (1983).Google Scholar
10 Titova, L. V., Kutrowski, M., Liu, X., Chakarvorty, R., Lim, W. L., Wojtowicz, T., Furdyna, J. K., and Dobrowolska, M.., Phys. Rev. B 72, 165205 (2005).Google Scholar
11 Shin, D. Y., Shin, D.Y., Chung, S. J., Sanghoon Lee, Liu, X., Furdyna, J. K., Phys. Rev. Lett. 98, 047201 (2007)Google Scholar
12 Chung, S.J., Shin, D.Y., Son, Hyunji, Lee, Sanghoon, Liu, X. and Furdyna, J.K., Sol. Sta. Comm. 143, 232 (2007).Google Scholar