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Four Current Examples of Characterization of Silicon Carbide

Published online by Cambridge University Press:  11 February 2011

S. Bai ,
Yue Ke ,
Y. Shishkin ,
O. Shigiltchoff ,
R. P. Devaty ,
W. J. Choyke ,
D. Strauch ,
B. Stojetz ,
B. Dorner  and
D. Hobgood
...Show all authors
S. Bai
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
Yue Ke
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
Y. Shishkin
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
O. Shigiltchoff
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
R. P. Devaty
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
W. J. Choyke
Affiliation:
Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh 15260, PA, USA
D. Strauch
Affiliation:
Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
B. Stojetz
Affiliation:
Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
B. Dorner
Affiliation:
Institut Laue-Langevin, 38042 Grenoble, France
D. Hobgood
Affiliation:
Cree, Inc., 4600 Silicon Drive, Durham, NC 27703
J. Serrano
Affiliation:
Max-Planck-Institut, Heisenbergstrasse 1, 70569 Stuttgart, Germany
M. Cardona
Affiliation:
Max-Planck-Institut, Heisenbergstrasse 1, 70569 Stuttgart, Germany
H. Nagasawa
Affiliation:
Hoya Advanced Semiconductor Technologies Co. Ltd., Kanagawa 229–1125, Japan
T. Kimoto
Affiliation:
Dept. of Electronic Science & Engineering, Kyoto University, Kyoto 606–01, Japan
L. M. Porter
Affiliation:
Dept. of Mat. Sci., Carnegie Mellon Univ., Pittsburgh, PA 15213, USA
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Abstract

A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperature photoluminescence (LTPL). Inelastic neutron scattering (INS) and X-ray Raman scattering (XRS) are compared for acoustical modes of 4H SiC. Schottky barrier heights are obtained for 4H and 6H SiC on different crystal faces using three different measuring techniques. Scanning electron microscopy (SEM) is used to display a variety of porous SiC morphologies achieved in n-type and p-type SiC.

This paper is intended to be the introduction to the “CHARACTERIZATION” section of this volume. To serve this purpose we illustrate the subject matter with new results using four distinct experimental techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.1
Copyright
Copyright © Materials Research Society 2003

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