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Forward Active and Blocking Performance of 4H-SiC Bipolar Junction Transistors

Published online by Cambridge University Press:  01 February 2011

Santhosh Balachandran ,
T. Paul Chow  and
Anant Agarwal
Santhosh Balachandran
Affiliation:
[email protected], Rensselaer Polytechnic Institute, CII 6015,, 110 8th street, TROY, NY, 12180, United States, 518-229 4579, 518-276 8761
T. Paul Chow
Affiliation:
[email protected], Rensselaer Polytechnic Institute, United States
Anant Agarwal
Affiliation:
[email protected], Cree Inc., United States
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Abstract

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific on-resistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined. A correlation between the open base blocking behavior (forward blocking) and the current gain (forward active) for 4H-SiC based high-voltage BJTs with lightly doped collector regions is presented and experimental device characteristics are utilized to verify our numerical analysis.

Keywords

electrical propertiesmicroelectronicselectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005 , 0888-V06-19
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Balachandran, S., Chow, T.P., Agarwal, A., Scozzie, C., Jones, K.A., Electron Device Letters 26 (7), 470 (2005).Google Scholar
2. Krishnaswami, S., Agarwal, A., Ryu, S.H., Capell, C., Richmond, J., Palmour, J., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K., Scozzie, C., Electron Device Letters 26 (3), 175 (2005).Google Scholar
3. Ryu, S.H., Agarwal, A.K., Singh, R., Palmour, J.W., Electron Device Letters 22 (3), 124 (2001).Google Scholar
4. Balachandran, S., Chow, T.P., Agarwal, A. presented at the 2005 International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, 2005 (unpublished).Google Scholar
5. Balachandran, S., Chow, T.P., Agarwal, A., Scozzie, C., Jones, K.A., Material Science Forum 483–485, 893 (2005).Google Scholar