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Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

Published online by Cambridge University Press:  15 February 2011

M. Abid ,
C. Terrier ,
J-P Ansermet  and
K. Hjort
M. Abid
Affiliation:
EPFL, Institut de Physique des Nanostructures, Station 3, CH-1015 Lausanne (Switzerland).
C. Terrier
Affiliation:
EPFL, Institut de Physique des Nanostructures, Station 3, CH-1015 Lausanne (Switzerland).
J-P Ansermet
Affiliation:
EPFL, Institut de Physique des Nanostructures, Station 3, CH-1015 Lausanne (Switzerland).
K. Hjort
Affiliation:
Uppsala University, Angstrom Laboratory, Materials Science department, Polackbäcken (Sweden).
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Abstract

Following the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 879: Symposium Z – Chemistry of Nanomaterial Synthesis and Processing , 2005 , Z7.17
Copyright
Copyright © Materials Research Society 2005

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References

1. Wolf, S. A., J. Supercond. 13 (2000), 195.Google Scholar
2. Prinz, G. A., Science 282 (1998), 1660.Google Scholar
3. Furdyna, J. K., J. Appl. Phys. 64, (1988), R24.Google Scholar
4. Dietl, T., Ohno, H., Matsukura, F., Cubert, J., and Ferrand, D., Science, 287, (2000), 1019.Google Scholar
5. Sato, K. and Katayama-Yoshida, H., Jpn. J. Appl. Phys., Part 2 39 (2000), L555.Google Scholar
6. Sharma, P., Gupta, A., Rao, K. V., Owens, F. J., Sharma, R., Ahuja, R., Osorio Guillen, J. M., Johansson, B. and Gehring, G. A., Nature Mater., 2 (2003), 673.Google Scholar
7. Peulon, S., Lincot, D. Adv. Mater. 8 (1996), 166.Google Scholar
8. Peulon, S., Lincot, D., J. Electrochem. Soc. 145 (1998), 864.Google Scholar
9. Izaki, M., Omi, T., J. Electrochem. Soc. 143 (1996), 166.Google Scholar
10. Izaki, M., Omi, T., Appl Phys. Lett. 68 (1996), 2439.Google Scholar
11. Izaki, M., Omi, T., J. Electrochem. Soc. 144 (1997), 1949.Google Scholar
12. Lee, H.-J., Jeong, S.-Y., Cho, C. R. and Park, C. H., Appl. Phys. Lett., 81 (2002) 21, 4020.Google Scholar
13. Jin, Z. W., Murakami, M., Fukumura, T., Matsumoto, Y., Ohtomo, A., Kawasaki, M., and Koinuma, H., J. Cryst. Growth, 214/215, (2000), 55.Google Scholar
14. Cheng, X.M. and Chien, C.L., J. of. App. Phys, (93), (2003), 10, 7876.Google Scholar
15. Spaldin, N. A., Phys. Rev. B, 69 (2004), 125201–1.Google Scholar