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Formation of Ultra-Thin Pore Seal Layer on Porous Low-k Films

Published online by Cambridge University Press:  01 June 2015

Shoko S. Ono ,
Yasuhisa Kayaba ,
Hirofumi Tanaka ,
Hiroko Wachi  and
Koji Inoue
Shoko S. Ono
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, 299-0265, Chiba, Japan
Yasuhisa Kayaba
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, 299-0265, Chiba, Japan
Hirofumi Tanaka
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, 299-0265, Chiba, Japan
Hiroko Wachi
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, 299-0265, Chiba, Japan
Koji Inoue
Affiliation:
R&D Center, Mitsui Chemicals, Inc., 580-32, Nagaura, Sodegaura, 299-0265, Chiba, Japan
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Abstract

In order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on top of the surface of porous low-k film while the pore sealant does not diffuse into pores. In this study, it was investigated how pore seal layer is formed on the surface of porous material and how pore mouths are sealed by pore seal layer. It was found that 1) thickness of the pore seal layer is well-controlled in the range < 5 nm, by varying spin rate and concentration of solid, 2) minimal thicknesses of the pore seal layer needed to achieve an efficient sealing for porous low-k films whose pore radius is 1.5 nm was 2.6 nm. 3) Larger pores, whose pore radius is 4.2 nm, were sealed completely with an expansion of our technology.

Keywords

solution depositionbarrier layerporosimetry
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1791: Symposium BB – Innovative Interconnects/Electrodes for Advanced Devices, Flexible and Green-Energy Electronics , 2015 , pp. 7 - 13
Copyright
Copyright © Materials Research Society 2015 

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