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Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

Published online by Cambridge University Press:  28 February 2011

Po-Ching Chen ,
Jian-Yang Lin  and
Huey-Liang Hwang
Po-Ching Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 30043, R. O. C.
Jian-Yang Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology Ta-Shi, Tao-Yuan, Taiwan 33509, R. O. C.
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology Ta-Shi, Tao-Yuan, Taiwan 33509, R. O. C.
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Abstract

Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 129
Copyright
Copyright © Materials Research Society 1991

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