Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:17:04.074Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

Published online by Cambridge University Press:  28 February 2011

Po-Ching Chen ,
Jian-Yang Lin  and
Huey-Liang Hwang
Po-Ching Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University Hsin-Chu, Taiwan 30043, R. O. C.
Jian-Yang Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology Ta-Shi, Tao-Yuan, Taiwan 33509, R. O. C.
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology Ta-Shi, Tao-Yuan, Taiwan 33509, R. O. C.
Get access

Abstract

Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 129
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Muraka, S. P., “Silicide for VLSI Application,” New York, Academic, 1983.Google Scholar
[2] Chow, T. P. and Steckl, A. J., IEDM Tech. Dig., p. 513 (1983).Google Scholar
[3] Muraka, S. P., Read, M. H., Doherty, C. J. and Fraser, D. B., J. Electrochem. Soc., Vol.129, p. 293 (1982).CrossRefGoogle Scholar
[4] Mattiussi, G. A., J. Vac. Sci. Tech., Vol.B4, No.6, p. 1352 (1986).CrossRefGoogle Scholar
[5] Sze, S. M., “VLSI Technology,” Singapore, McGraw-Hill, p. 300 (1988).Google Scholar
[6] Chu, W. K., Mayer, J. W. and Nicolet, Marc A, “Backscattering Spectrometry,” New York, Academic, 1978.CrossRefGoogle Scholar
[7] Beyers, R. and Sinclair, R., J. Appl. Phys., Vol.57, No.12, p. 5240 (1985).CrossRefGoogle Scholar
[8] Muraka, S. P., J. Vac. Sci. Tech., Vol.17, p. 775 (1980).CrossRefGoogle Scholar