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Formation of TiO2 Thin Films by Oxidation of TiN

Published online by Cambridge University Press:  22 February 2011

J. K. Truman ,
P. H. Ballentine ,
E. Terzioglu  and
A. M. Kadin
J. K. Truman
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
P. H. Ballentine
Affiliation:
CVC Products, Inc., 525 Lee Road, Rochester, NY 14603
E. Terzioglu
Affiliation:
University of Rochester, Dept. of Electrical Engineering, Rochester, NY 14627
A. M. Kadin
Affiliation:
University of Rochester, Dept. of Electrical Engineering, Rochester, NY 14627
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Abstract

TiN thin films were deposited by reactive sputtering onto Si substrates. TiO2 films were formed by subsequent oxidation of the TiN films, using either conventional furnace heating or rapid thermalprocessing (RTP). The materials properties of the resulting films were characterized by x-ray diffraction and Rutherford backscattering, and indicate conversion of the TiN to fully-oxidized rutile TiO2 by a diffusion-limited process. Electrical measurements of the insulating properties of the TiO2 films indicated a relative dielectric constant greater than 100, although the leakage current was greater than optimum. A fully in-situ process for the fabrication of microcapacitors is proposed, which involves the sputter deposition of TiN, the formation of TiO2 by RTP, and the deposition of a top TiN counterelectrode. This can be carried out under conditions that are compatible with Si microelectronic device processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 637
Copyright
Copyright © Materials Research Society 1993

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References

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