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The Formation of TiN-Encapsulated Cu Interconnects

Published online by Cambridge University Press:  25 February 2011

Jian Li ,
J. W. Strane ,
S. W. Russell ,
P. Chapman ,
Y. Shacham-Diamand  and
J. W. Mayer
Jian Li
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY14853
J. W. Strane
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY14853
S. W. Russell
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY14853
P. Chapman
Affiliation:
National Nano fabrication Facility, Cornell Univeristy, Ithaca, NY14853
Y. Shacham-Diamand
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY14853
J. W. Mayer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY14853
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Abstract

A TiN(0)-encapsulated copper structure was made by annealing a Cu-10 at%Ti alloy film evaporated on a SiO2/Si(100) substrate in N2 or NH3 ambiente. During thermal cycling, the tensile stress in the nitridated films is in the range of 200 to 800 MPa. The stress relaxation depends on the cooling cycle and the presence of interlayer between film and substrate. A fast heating rate (70°C/min.) to 550°C in an NH3 ambient can effectively suppress the formation of Cu3Ti and enhance the TiNχ(0) formation near the surface of the copper film. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance. A fully encapsulated Cu fine line structure can be achieved by annealing a Cu-10at%Ti alloy film in an Ar ambient at 550°C and then in an NH3 ambient at 550°C to form TiOχ/Ti5Si3 adhesion layer and TiN(O) layer, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 605
Copyright
Copyright © Materials Research Society 1992

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References

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