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Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

Published online by Cambridge University Press:  15 February 2011

C. Deng ,
J. C. Wu ,
C. J. Barbero ,
T. W. Sigmon  and
M. N. Wybourne
C. Deng
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute, P. O. Box 91000, Portland, OR 97291-1000
J. C. Wu
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, USA
C. J. Barbero
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute, P. O. Box 91000, Portland, OR 97291-1000
T. W. Sigmon
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706
M. N. Wybourne
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, USA
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Abstract

A fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 105
Copyright
Copyright © Materials Research Society 1995

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References

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