Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-05T11:45:24.343Z Has data issue: false hasContentIssue false
  • English
  • Français

A Formation of SiO2/4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing

Published online by Cambridge University Press:  10 February 2011

K. Fukuda ,
K. Sakamoto ,
K. Nagai ,
T. Sekigawa ,
S. Yoshida  and
K. Arai
K. Fukuda
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, [email protected]
K. Sakamoto
Affiliation:
Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
K. Nagai
Affiliation:
Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
T. Sekigawa
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, [email protected] Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
S. Yoshida
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, [email protected] Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
K. Arai
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body, Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan, [email protected] Electrotechnical Laboratory, 1–1-4, Umezono, Tsukuba, Ibaraki, 305–8568 Japan
Get access

Abstract

A formation of SiO2/4H-SiC interfaces by oxidizing deposited poly-Si on a 4H-SiC substrate and high temperature hydrogen annealing at low pressure ( 8.5×102 Pa ) has been investigated. The oxidation rate of deposited poly-Si was approximately 100 times faster than that of a SiC. Hydrogen annealing more effectively reduced the flat band voltage shift ( ΔVfb ) of the 4H-SiC MOS structure than argon and vacuum annealing. Moreover, the good SiO2/4H-SiC interface was formed because ΔVfb decreased as the oxidation temperature increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 105
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cooper, J. A. Jr, Melloch, M. R., Woodall, J. M., Spitz, J., Schoen, K. J. and Henning, J. P.: III-Nitrides and Related Materials, eds. G., Pensil, H., Morkoc, B., Monemar and Janzén, E. (Trans Tech Publications Ltd, Switzerland” Germany” UK” USA, 1998), p. 895.Google Scholar
2. Hara, K.: III-Nitrides and Related Materials, eds. G., Pensil, H., Morko;, B., Monemar and E., Janzén (Trans Tech Publications Ltd, Switzerland’ Germany- UK- USA, 1998), p. 901.Google Scholar
3. Weitzel, C. E.: Ill-Nitrides and Related Materials, eds. G., Pensil, H., Morkoý, B., Monemar and E., Janzén (Trans Tech Publications Ltd, Switzerland” Germany” UK” USA, 1998), p. 907.Google Scholar
4. Afanasev, V. V., Bassler, M., Pensl, G. and Schulz, M.: Silicon Carbide, eds. Choyke, W. J., Matsunami, H. and Pensl, G. (Akademie Verlag, Berlin, 1997) Vol. 2, p. 321.Google Scholar
5. Afanasev, V. V., Stesmans, A. and Harris, C. I.: III-Nitrides and Related Materials, eds. G., Pensil, H., Morkoé, B., Monemar and E., Janzén (Trans Tech Publications Ltd, Switzerland” Germany’ UK’ USA, 1998), p. 857.Google Scholar
6. Fukuda, K., Nagai, K., Sekigawa, T., Yoshida, S., Arai, K. and Yoshikawa, M.: Extended Abstract of the 1998 International Conference on Solid State Device and Materials (the Japan Society of Applied Physics, Tokyo, 1998), p100.Google Scholar
7. Fukuda, K., Nagai, K., Sekigawa, T., Yoshida, S., Arai, K. and Yoshikawa, M. to be published in Jpn. J. Appl. Phys.Google Scholar
8. Kamigaki, Y. and Itoh, Y: J. Appl. Phys.,48, 2891 (1977).10.1063/1.324099Google Scholar
9. Gölz, A., Horstmann, G., von Kamienski, E. Stein and Kurz, H.: Silicon Carbide and Related Materials, eds. S., Nakashima, H., Matsunami, S., Yoshida and H., Harima (IOP Publishing Ltd, London, 1995), p.634.Google Scholar