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The Formation of Silicon-Rich Silicides

Published online by Cambridge University Press:  25 February 2011

Maria Ronay  and
R.G. Schad
Maria Ronay
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
R.G. Schad
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
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Abstract

Diffusion studies of mono and bilaycrs of transition-metal films on silicon showed that the formation of η′ —Cu3Si lowers the formation temperature of subsequently forming ReSi2 by 400°C. This is due to the creation of a large amount of silicon self-interstitials accompanying the formation of the copper suicide, which lowers the activation energy for silicon diffusion. The generalization of this result - stating that the formation of all suicides, in which the volume density of silicon is much larger than in elementary silicon injects silicon self-intcrstitials into the silicon lattice - gives new insight into suicide formation, silicide-cnhanccd dopant diffusion and the self-diffusion of silicon itself6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 573
Copyright
Copyright © Materials Research Society 1990

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References

1 Tu, K.N. and Mayer, J.W. in Thin Films- Inter diffusion and Reactions edited by Poate, J.M., Tu, K.N. and Mayer, J.W. (Wiley, New York, 1978), p. 359.Google Scholar
2 Frank, W., Gösele, U., Mehrer, H. and Seeger, A. in Diffusion in Crystalline Solids edited by Murch, G.E. and Nowick, A.S., Materials Science Series (Academic, New York, 1984), p. 63.Google Scholar
3 Weber, Eicke R., Appl. Phys. A 30 , 1 (1983).Google Scholar
4 Chu, J.J., Chen, L.J., and Tu, K.N., J. Appl. Phys. 62, 461 (1987).Google Scholar
5 Mukherjee, K.P., Bandyopadhyaya, J., and Gupta, K.P., AIME Trans. 245 , 2335 (1969).Google Scholar
6 Ronay, Maria and Schad, R.G., ‘A new insight into suicide formation: the creation of silicon self-interstitials’ submitted to Phys.Rev.Lett, on November 13, 1989.Google Scholar
7 Seibt, M. and Graff, K., J. Appl. Phys. 63, 4444 (1988).Google Scholar
8 Nes, E. and Washburn, J., J. Appl. Phys. 42, 3562 (1971).Google Scholar
9 Föll, H. and Kolbesen, B.O., Appl. Phys. 8, 319 (1975).Google Scholar
10 Wittmer, M. and Seidel, T.E., J. Appl. Phys. 49, 5827 (1978).Google Scholar
11 Wittmer, M. and Tu, K.N., Phys. Rev. B 29, 2010 (1984).Google Scholar
12 Gösele, U., Frank, W. and Seeger, A., Appl. Phys. 23, 361 (1980).Google Scholar