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Formation of Silicon and Silicon-Based Semiconductor Materials via Photoinduced Reaction Using Femtosecond Laser

Published online by Cambridge University Press:  04 February 2011

Masakazu Nishimura ,
Shingo Kanehira ,
Masaaki Sakakura ,
Yasuhiko Shimotsuma ,
Kiyotaka Miura  and
Kazuyuki Hirao
Masakazu Nishimura
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Japan
Shingo Kanehira
Affiliation:
Society-Academia Collaboration for Innovation, Kyoto University, Japan
Masaaki Sakakura
Affiliation:
Society-Academia Collaboration for Innovation, Kyoto University, Japan
Yasuhiko Shimotsuma
Affiliation:
Society-Academia Collaboration for Innovation, Kyoto University, Japan
Kiyotaka Miura
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Japan
Kazuyuki Hirao
Affiliation:
Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Japan
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Abstract

We have succeeded in silicon (Si) precipitation inside a glass/aluminum (Al) sandwich structure via photoinduced reaction using femtosecond (fs) laser irradiation. The sandwich structure was fabricated by direct bonding below 573 K. Raman spectra at the photomodified area indicated that Si crystals formed at the interface between the glass and metallic Al after the laser irradiation. In addition, the particle size of the precipitated Si could be changed by changing the pulse energy of the laser. Furthermore, we have also focused the laser pulses on Fe-Si film to trigger crystallization and phase transformation of FexSiy at the interface between Fe/Si multilayer and glass.

Keywords

laser-induced reactionSiphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-58
Copyright
Copyright © Materials Research Society 2011

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References

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