Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:43:29.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of quantum dots by self-rearrangement of metastable 2D GaN

Published online by Cambridge University Press:  11 February 2011

N. Gogneau ,
D. Jalabert ,
E. Monroy ,
C. Adelmann  and
B. Daudin.
N. Gogneau
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
D. Jalabert
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
E. Monroy
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
C. Adelmann
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
B. Daudin.
Affiliation:
CEA / CNRS / UJF Research Group “Nanophysique et Semiconducteurs” Dept. de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC CEA - Grenoble, 17 rue des Martyrs, 38054 - Grenoble cedex 9, France.
Get access

Abstract

We propose a new procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum from a GaN 2D layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the GaN coverage. We demonstrate that the QD density can be controlled in the 1010 cm−2 to 2 × 1011 cm−2 range. It is shown that beyond a given GaN thickness there is a coexistence between elastic and plastic relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L8.8
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Daudin, B., Widmann, F., Feuillet, G., Samson, Y., Arlery, M. and Rouvière, J.L., Phys. Rev. B 56, 7069 (1997).Google Scholar
2 Guha, S., Madhukar, A. and Rajkuma, K. C., Appl. Phys. Lett. 57, 2110 (1990).Google Scholar
3 Varma, S., Reaves, C.M., Bressler-Hill, V., Den Baars, S. P. and Weinberg, W. H., Surf. Sci. 393, 24 (1997).Google Scholar
4 Mula, G., Adelmann, C., Moehl, S., Oullier, J. and Daudin, B., Phys. Rev. B 64, 195406 (2001).Google Scholar
5 Adelmann, C., Gogneau, N., Sarigiannidou, E., Rouvière, J. L. and Daudin, B., Appl. Phys. Lett. 81, 3064 (2002).Google Scholar
6 Adelmann, C. et al, unpublished.Google Scholar
7 Kern, R. and Müller, P., Surf. Sci. 392, 103 (1997).Google Scholar