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Formation of Ohmic Carrier Injection at Anode/organic Interfaces and Carrier Transport Mechanisms of Organic Thin Films

Published online by Cambridge University Press:  31 January 2011

Toshinori Matsushima ,
Guang-He Jin ,
Yoshihiro Kanai ,
Tomoyuki Yokota ,
Seiki Kitada ,
Toshiyuki Kishi  and
Hideyuki Murata
Toshinori Matsushima
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Guang-He Jin
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Yoshihiro Kanai
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Tomoyuki Yokota
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Seiki Kitada
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Toshiyuki Kishi
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Hideyuki Murata
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
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Abstract

We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA), 4,4′,4″-tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

Keywords

devicesdisplayelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B10-92
Copyright
Copyright © Materials Research Society 2009

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