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Formation of Micro-Precipitates at the Melt-Solid Interface in Semiconductors

Published online by Cambridge University Press:  26 February 2011

H.J. MÖller
H.J. MÖller*
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
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Abstract

A theory is developed for the formation of precipitates in very dilute hypereutectic two phase systems during solidification. It is based on a mechanism for the growth of microdefects at the melt -interface. The model presents a solution of the diffusion problem for the solute atoms in the melt and provides an analysis of the factors which determine the particle size and their mean distance. The possibility of microdefect nucleation in front of the melt -interface, which can lead to very large precipitates, is discussed. The model is suitable to describe the formation of microdefects in semiconductors where impurity concentrations are generally low but may exceed the solubility limit in the melt. The results of the theory are compared with experimental investigations of the silicon carbide formation in carbon rich silicon crystals grown from the melt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 423
Copyright
Copyright © Materials Research Society 1992

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References

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