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Formation of Intensive Photoluminescence in Porous Silicon

Published online by Cambridge University Press:  15 February 2011

V. A. Makara ,
M. S. Boltovets ,
O. V. Vakulenko ,
O. I. Datsenko  and
O. V. Rudenko
V. A. Makara
Affiliation:
Taras Shevchenko Kiev National University, Department of Physics, Volodymyrska St., 64, Kyjiv, 252033, Ukraine
M. S. Boltovets
Affiliation:
Taras Shevchenko Kiev National University, Department of Physics, Volodymyrska St., 64, Kyjiv, 252033, Ukraine
O. V. Vakulenko
Affiliation:
Taras Shevchenko Kiev National University, Department of Physics, Volodymyrska St., 64, Kyjiv, 252033, Ukraine
O. I. Datsenko
Affiliation:
Taras Shevchenko Kiev National University, Department of Physics, Volodymyrska St., 64, Kyjiv, 252033, Ukraine
O. V. Rudenko
Affiliation:
Taras Shevchenko Kiev National University, Department of Physics, Volodymyrska St., 64, Kyjiv, 252033, Ukraine
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Abstract

Photoluminescence (PL) spectra of porous silicon (PS) samples are studied. Effect of mechanical stresses in substrate on PL intensity is shown. The quantum yield (QY) of PS luminescence is estimated by comparing PL spectra of PS and rhodamine 6G.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 193
Copyright
Copyright © Materials Research Society 1996

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