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Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
Published online by Cambridge University Press: 10 February 2011
Abstract
In this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.
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- Copyright © Materials Research Society 1999
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