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Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

Published online by Cambridge University Press:  26 February 2011

S. Furukawa ,
T. Asano ,
T. Fukada ,
H. Ishiwara  and
K. Tsutsui
S. Furukawa
Affiliation:
Graduste School of Science and Engineering, Tokyo Institute of TechnologyNagatsuda, Mi dori ku, Yokohama 227, JAPAN
T. Asano
Affiliation:
Graduste School of Science and Engineering, Tokyo Institute of TechnologyNagatsuda, Mi dori ku, Yokohama 227, JAPAN
T. Fukada
Affiliation:
Graduste School of Science and Engineering, Tokyo Institute of TechnologyNagatsuda, Mi dori ku, Yokohama 227, JAPAN
H. Ishiwara
Affiliation:
Graduste School of Science and Engineering, Tokyo Institute of TechnologyNagatsuda, Mi dori ku, Yokohama 227, JAPAN
K. Tsutsui
Affiliation:
Graduste School of Science and Engineering, Tokyo Institute of TechnologyNagatsuda, Mi dori ku, Yokohama 227, JAPAN
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Abstract

Ion beam mixing effects on metals and highly doped semiconductors on GaAs for formation of ohmic contacts have been studied. In this study, we have principally selected Pt as metal and Ge as semiconductors electrodes for GaAs. In Pt/GaAs system, we observed alloying phenomena induced by Si+, Ar+, Ge+ ion mixing effects. The amount of GaAs reacted with Pt was found to be proportional to the mass of the incident ions for constant dose. Concernig with the formation of ohmic contacts, only in the case of Si implantation through Pt films, the conversion from Schottky- to ohmic-contact was observed due to ion beam mixing effects. In Ge/GaAs system, we observad the solid state epitaxy for implanted Ge layer by the first annealing at 450°C in the two step annealing, but no activation of the implanted species. For activating implanted species, the second annealing at 800°C was effective. Concerning with the formation of ohmic contacts, we observed that the ohmic I-V characteristics for Ge/GaAs system could be obtainable when the following conditions were satisfied at the same time: 1) high dose implantation of As+ into Ge layer, 2) low dose implantation of Si into Ge/GaAs boundary and 3) relatively short period annealing in the second annealing step. From such study, it is concluded that ion beam mixing in conjunction with rapid annealing would be most promising for forming stable and reproducible ohmic contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 207
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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