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Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

Published online by Cambridge University Press:  01 February 2011

Reinhart Job ,
Franz-Josef Niedernostheide ,
Hans-Joachim Schulze  and
Holger Schulze
Reinhart Job
Affiliation:
[email protected][email protected], University of Hagen, Mathematics and Computer Science, Hagen, Germany
Franz-Josef Niedernostheide
Affiliation:
[email protected], Infineon Technologies AG, München, Germany
Hans-Joachim Schulze
Affiliation:
[email protected], Infineon Technologies AG, München, Germany
Holger Schulze
Affiliation:
[email protected], Infineon Technologies Austria AG, Villach, Austria
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Abstract

By means of two-point-probe Spreading Resistance (SR) analyses, the formation and evolution of hydrogen-related and vacancy-related donor and acceptor states were studied in helium implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers. He-implantation was carried out at 3.75 MeV, applying fluences of 1×1014 cm-2 and 2×1013 cm-2. After 15-min post-implantation H-plasma exposures at substrate temperatures between 350 °C and 500 °C, distinct surplus doping profiles were observed in the subsurface layers of the treated FZ Si samples down to about 20 μm depth. Enhanced donor concentrations could be observed as well acceptor-like states, at least partially compensating for the initial n-type doping, so that even buried p-type layers can be created under appropriate process conditions. The nature of the defect complexes that were responsible for the observed doping profiles in the subsurface layer of the studied samples will be discussed.

Keywords

Siion-implantationdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A12-03
Copyright
Copyright © Materials Research Society 2009

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References

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