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Formation of Dislocations in NiAl Single Crystals Studied by In Situ Electrical Resistivity Measurement

Published online by Cambridge University Press:  10 February 2011

Y. Q. Sun ,
P. M. Hazzledine  and
D. M. Dimiduk
Y. Q. Sun
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, IL 61801, USA.
P. M. Hazzledine
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson, AFB, OH 45433–7817, USA
D. M. Dimiduk
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson, AFB, OH 45433–7817, USA
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Abstract

This paper reports experiments in which in situ electrical resistivity measurements were used to monitor the formation of dislocations in initially dislocation-free NiAl single crystals. The electrical resistivity is found to exhibit an abrupt jump at the onset of plastic yielding. This is interpreted to result from an abrupt nucleation of a massive density of dislocations at the yield point.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 49
Copyright
Copyright © Materials Research Society 1998

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References

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