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Formation of deuterium-related shallow donors in boron-doped diamond.

Published online by Cambridge University Press:  17 March 2011

Jacques Chevallier ,
Zéphirin Teukam ,
Cécile Saguy ,
Rafi Kalish ,
Catherine Cytermann ,
Francis Bailly ,
Frančois Jomard ,
Thierry Kociniewski ,
Dominique Ballutaud  and
Michel Barbé
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Jacques Chevallier
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Zéphirin Teukam
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Cécile Saguy
Affiliation:
Physics Department and Solid State Institute, Technion, Haifa 32000-, Israel
Rafi Kalish
Affiliation:
Physics Department and Solid State Institute, Technion, Haifa 32000-, Israel
Catherine Cytermann
Affiliation:
Physics Department and Solid State Institute, Technion, Haifa 32000-, Israel
Francis Bailly
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Frančois Jomard
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Thierry Kociniewski
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Dominique Ballutaud
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
Michel Barbé
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
James E. Butler
Affiliation:
Naval Research Laboratory, Code 6174, Washington, DC 20375, USA
CÉline Baron
Affiliation:
Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS B.P.166, 38042 Grenoble Cedex 09, France
Alain Deneuville
Affiliation:
Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS B.P.166, 38042 Grenoble Cedex 09, France
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Abstract

It is well known that diffusion of deuterium in boron-doped diamond results in the passivation of boron acceptors with the formation of (B,D) complexes. In this work, we show that deuteration of boron-doped diamond can induce a p-type to n-type conversion under certain conditions. The n-type conductivity is governed by the ionization of shallow donors with a ionization energy of 0.34 eV. This is well below the lowest ionization energy of donors found up to now in diamond (0.6 eV for phosphorus donors). The electrical conductivity and the electron mobility can be as high as 6 S/cm and 430 cm2/Vs at 300 K. The reversibility of the effect under thermal annealing and the necessity of excess deuterium to trigger the n-type conductivity suggest that deuterium is involved in the formation of the shallow donors. The present status concerning the understanding of their origin is discussed. In addition, we have found that, contrary to previous conclusions, deuterium can diffuse in type Ib diamond. The conditions where this diffusion is observed are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H8.2
Copyright
Copyright © Materials Research Society 2004

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