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Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

Published online by Cambridge University Press:  03 September 2012

J. Teichert ,
L. Bischoff ,
E. Hesse ,
D. Panknin  and
W. Skorupa
J. Teichert
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D–01314 Dresden, Germany
L. Bischoff
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D–01314 Dresden, Germany
E. Hesse
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D–01314 Dresden, Germany
D. Panknin
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D–01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Material Research, P.O. Box 510119, D–01314 Dresden, Germany
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Abstract

The maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 153
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. White, A.E., Short, K.T., Dynes, R.C., Garno, J.P. and Gibson, J.M., AppI. Phys. Lett. 50, 95 (1987).Google Scholar
2. White, A.E., Short, K.T., Dynes, R.C., Gibson, J.M. and Hull, R., Mat. Res. Soc. Symp. Proc. 100, 3 (1988).CrossRefGoogle Scholar
3. Kohlhof, K., MantI, S., Jager, W. and Stritzker, B., Appl. Surf. Sci. 38, 207 (1989).Google Scholar
4. Radermacher, K., Mantl, S., Kohlhof, K. and Jager, W., J. Appl. Phys. 68, 3001 (1990).CrossRefGoogle Scholar
5. Zimmermann, N.M., Liddle, J.A., White, A.E. and Short, K.T., AppI. Phys. Lett. 62, 387 (1993).Google Scholar
6. Bischoff, L., Hesse, E., Janssen, D., Naehring, F.K., Notzold, F., Schmidt, G. and J. Teichert, Microelectronic Engineering 13, 637 (1991).Google Scholar
7. Bischoff, L., Hesse, E., Hofmann, G., Naehring, F.K., Probst, W., Schmidt, B. and Teichert, J., Microelectronic Engineering 21, 197 (1993).Google Scholar
8. Teichert, J. and Tiunov, M.A., Meas. Sci. Technol. 4, 754 (1993).Google Scholar
9. Hesse, E., Bischoff, L. and Teichert, J., submitted to J. Phys. DGoogle Scholar
10. Melngailis, J., J. Vac. Sci. Technol. B 5, 469 (1987).Google Scholar
11. Bamba, Y., Miyauchi, E., Arimoto, H., Kuramoto, K., Tahamori, A., Hashimoto, H. and Utsumi, T., Jap. J. AppI. Phys. 22, L650 (1983).CrossRefGoogle Scholar
12. Bamba, Y., Miyauchi, E., Arimoto, H., Tahamori, A. and Hashimoto, H., Jap. J. AppI. Phys. 23, L515 (1984).Google Scholar