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Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources

Published online by Cambridge University Press:  03 September 2012

A.J. Ptak ,
K.S. Ziemer ,
L.J. Holbert ,
C.D. Stinespring  and
T.H. Myers
A.J. Ptak
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
K.S. Ziemer
Affiliation:
Department of Chemical EngineeringWest Virginia University, Morgantown, WV 26506
L.J. Holbert
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
C.D. Stinespring
Affiliation:
Department of Chemical EngineeringWest Virginia University, Morgantown, WV 26506
T.H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV [email protected]
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Abstract

Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al1−xBxN would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.33
Copyright
Copyright © Materials Research Society 1999

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