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Formation of a-Si:H Film by p-CVD Method with SiH4-He Mixture and its Opto-Electronic Properties

Published online by Cambridge University Press:  15 February 2011

Youichi Nakamura ,
Tsuyoshi Yamaguchi  and
Atsushi Okagawa
Youichi Nakamura
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Tsuyoshi Yamaguchi
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
Atsushi Okagawa
Affiliation:
Nippon Institute of Technology, Department of Systems Engineering, Miyashiro, Minami-saitama, Saitama, 345, JAPAN
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Abstract

Formation of hydrogenated amorphous silicon (a-Si:H) was carried out by rf glow discharge method in the reactive gas systems of silane. By preliminary experiments on a-Si:H for helium dilution, a relatively high deposition rate up to 2–3 μm/hr was obtained. In order to investigate the opto-electronic properties on a-Si:H films due to different dilution of helium or hydrogen, measurements on optical band gap Eop, electric conductivity and FT-IR were done. Optical emission spectra were also observed. Optical band gap value Eop on a-Si:H film for SiH4 (10%) -He (90%) was nearly constant about 1.73 eV, while that for SiH4 (10%) -H2 (90%) was increased from 1.75 eV to 1.78 eV with increase of residence time of silane molecule and it was relatively high. From the experimental results of FT-IR, ratio of bonding mode of SiH to (SiH+SiH2) for hydrogen dilution was about 90% and higher than that for helium dilution, while hydrogen concentration in the film for SiH4 (10%) -H2 (90%) was less than 10% and that for SiH4 (10%) -He (90%) was 20–30%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 21
Copyright
Copyright © Materials Research Society 1995

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References

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