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Formation of β-and α-FeSi2 Films on (100) Silicon using Fe-Si and Fe-Ti-Si Diffusion Couples

Published online by Cambridge University Press:  03 September 2012

K. Kyllesbech Larsen ,
A. Lauwers ,
K. Maex  and
M. Van Rossum
K. Kyllesbech Larsen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

An investigation of the influence of an intermediate titanium thin film on the silicidation reaction between an overlying iron film and the (100)-oriented silicon substrate is presented. The Fe-Ti bilayers were obtained by consecutive sputtering of a Ti layer and an Fe layer on Si substrates. In addition, single iron layers were made by sputtering for comparison with the bilayers. By subsequent rapid-thermnal processing (RTP), depending on the annealing conditions, both the semiconducting β- and the metallic α-FeSi2 thin films could be formed. The phase formation has been investigated as a function of the thickness of the titanium layer, the annealing time and temperature. In this paper the first results on iron disilicide formation through Fe-Ti-Si diffusion couples are shown. Characterisation of the FeSi2 layers using Rutherford backscattering spectrometry (RBS), channelling RBS, X-ray diffraction (XRD), sheet resistivity measurements will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 85
Copyright
Copyright © Materials Research Society 1994

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References

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