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Formation of Al Nanodot Array by the Combination of Nano-Indentation and Anodic Oxidation

Published online by Cambridge University Press:  15 March 2011

S. Shingubara
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, [email protected]
Y. Murakami
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, [email protected]
K. Morimoto
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, [email protected]
H. Sakaue
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, [email protected]
T. Takahagi
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, [email protected]
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Abstract

The control of nanoholes formed by anodic oxidation of aluminum (Al) was investigated using AFM nano-indentation on Al film prior to the anodic oxidation. It is well known that ordered trigonal nanohole arrays are formed under certain voltage conditions of anodic oxidation of Al. We succeeded in forming both tetragonal and trigonal arrays of alumina nanoholes on a SiO2/Si- substrate by using nano-indentation on the surface of sputtered pure Al film. The ordered array of nanoholes was obtained at indentation intervals that were close to the nearest neighbor distance of nanoholes in the self-organization condition. Furthermore, we fabricated tetragonal and hexagonal Al nanodot arrays by the selective removal of porous alumina film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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