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The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

Published online by Cambridge University Press:  10 February 2011

P.E. Thompson ,
C. Silvestre ,
M. Twigg ,
G. Jernigan  and
D.S. Simons
P.E. Thompson
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375-5347 (202)404-8541, (202)404-7194, [email protected]
C. Silvestre
Affiliation:
ASEE Post-Doctoral Fellow, Naval Research Laboratory, Washington, DC 20375-5347
M. Twigg
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375-5347 (202)404-8541, (202)404-7194, [email protected]
G. Jernigan
Affiliation:
Code 6812, Naval Research Laboratory, Washington, DC 20375-5347 (202)404-8541, (202)404-7194, [email protected]
D.S. Simons
Affiliation:
NIST, Gaithersburg, MD 20899, USA
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Abstract

Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 367
Copyright
Copyright © Materials Research Society 1998

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