Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T08:50:33.094Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of a Low Thermal Donor Concentration Layer in CZ Si Wafer During 450°C/64h Annealing

Published online by Cambridge University Press:  28 February 2011

S. Hahn
S. Hahn*
Affiliation:
Siltec Corporation, Mountain View, CA 94043
Get access

Abstract

For thermal donor and oxygen precipitation studies in Cz silicon wafers, extended 450°C thermal annealing (e.g., anneal at 450°C for 64 h) has frequently been used. But, our recent studies have shown that this kind of extended low temperature anealing leads to a low thermal donor (LTD) layer up to ∼ 8 um from the surface in the case of 450°C/64 h thermal annealing. In this study, effects of annealing ambients, protective layers, surface conditions, and bulk oxygen contents upon the LTD layer are discussed. Our data indicate that the LTD layer is a product of both surface- and bulk-related phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 181
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schaake, H.F., Baber, S.C., and Pinizzotto, R.F., in “Semiconductor Silicon 1981”, ed. EHuff, H.R., Kriegler, R.J. and Takeishi, Y., Proceedings Vol. 81–5, The Electrochemical Society, p. 2 73 (1981).Google Scholar
2. Isome, S., Aoki, S., and Watanabe, K., J.Appl.Phys. 55, 817 (1984).CrossRefGoogle Scholar
3. Hu, S.M., Appl.Phys.Lett. 31, 53 (1977).CrossRefGoogle Scholar