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Formation Mechanism of Epitaxial CoSi2 Films on (001) Si Using Ti-Co Bimetallic Layer Source Materials

Published online by Cambridge University Press:  25 February 2011

S. L. Hsia ,
T. Y. Tana ,
P. L. Smith  and
G. E. Mcguire
S. L. Hsia
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
P. L. Smith
Affiliation:
MCNC, Center for Microelectronics, Research Triangle park, NC 27709
G. E. Mcguire
Affiliation:
MCNC, Center for Microelectronics, Research Triangle park, NC 27709
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Abstract

The mechanism of formation of epitaxial CoSi2 film on (001) Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co silicide formation processes and structures in samples prepared by isochronal annealing and by isothermal annealing. The results demonstrated that, in leading to epitaxial CoSi2 film formation, Ti has played two roles. It has served as a barrier material to Co atoms and thus preventing Co2Si from forming. More importantly, it has allowed nucleation and growth of epitaxial-CoSi2 to dominate the Co silicide film formation process, apparently because it has served as a cleanser to remove native oxide from the Si substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 603
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Dass, M. L. A., Fraser, D. B., and Wei, C.-S., Appl. Phys. Lett. 58, 1308 (1991).CrossRefGoogle Scholar
2. Hsia, S. L., Tan, T. Y., Smith, P. L., and McGuire, G. E., J. Appl. Phys. 70, 7579 (1991).Google Scholar
3. Hsia, S. L., Tan, T. Y., Smith, P. L., and McGuire, G. E., J. Appl. Phys. 72, 1864 (1992).CrossRefGoogle Scholar
4. Schwarz, R. B. and Johnson, W. L., Phys, Rev. Lett. 51, 4151 (1983).Google Scholar
5. Herd, S., Tu, K. N., and Ahn, K. Y., Appl. Phys. Lett. 42, 597 (1983).CrossRefGoogle Scholar
6. Hong, F., Rozgonyi, G. A., and Patnaik, B., Appl. Phys. Lett. 61, 1519 (1992).CrossRefGoogle Scholar
7. Raaijmakers, I. J. M. M., Reader, A. H., and Oosting, P. H., J. Appl. Phys. 63, 2790 (1988).Google Scholar
8. Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
9. Appelbaum, A., Knoel, R. V., and Murarka, S. P., J. Appl. Phys. 57, 1880 (1985).Google Scholar
10. Van den hove, L., Wolters, R., Maex, K., De Keersmaecker, R., and Declerck, G., J. Vac. Sci. Technol. B4, 1358 (1986).Google Scholar