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The Formation Mechanism and Removal Methods of Metal Pillar by Plasma Etch

Published online by Cambridge University Press:  22 February 2011

Eungsoo Kim ,
Dong-Won Yun ,
Chang-Bum Jeong ,
Sang-Kug Han ,
Soon-Kwon Lim  and
Kyu-Hyun Choi
Eungsoo Kim
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
Dong-Won Yun
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
Chang-Bum Jeong
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
Sang-Kug Han
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
Soon-Kwon Lim
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
Kyu-Hyun Choi
Affiliation:
Microprocess Development Team, Semiconductor R & D Center, SAMSUNG Electronics Co., Ltd., Buchun, Kyunggi-Do, 421-130, KOREA
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Abstract

During the plasma etching of Al-Si-Cu alloy used as a metal interconnection, it is generally reported that the metal pillar (or conical residue) affecting the degradation of device yield is formed by the micromasking effect of copper compound. However, it is stilldisputed with the formation mechanism and composition of the micromasking material. Moreover, the elimination method of the metal pillar is not well known.

According to previous reports, it is argued that the micromasking material consists of Cu agglomerates, A12Cu, or CuC1, and the formation mechanism of the micromasking is due to byproduct during plasma etching or reaction product during metal depositionor etching. However, using scanning electron microscopy (SEM), energy dispersive of x-ray (EDX), and high resolution Auger spectroscopy (HRAES), it is newly found that the micromasking consists of three layered structure, that is copper aluminum oxide, A12Cu, and Cu agglomerates. These results are quite different from previous reports. In addition, the removal methods of the metal pillar are suggested, which are high power dry etch process and multilayered metal deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 519
Copyright
Copyright © Materials Research Society 1994

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References

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