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Formation Energy of Interstitial Si in Au-Doped Si

Published online by Cambridge University Press:  10 February 2011

Masashi Suezawa
Masashi Suezawa*
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, JAPAN, [email protected]
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Abstract

In this report, we proposed that complexes responsible for optical absorption lines in Si grown in a hydrogen (H) atmsophere were composed of interstitial Si and H atoms and then determined the formation energy of interstitial Si in Au-doped Si from the measurements of optical absorption due to H bound to interstitial Si. In the first experiment, specimens were grown in a hydrogen atmosphere. In the second experiment, Si crystals were doped with Au by a vapor method; namely, specimens were sealed in quartz capsules together with a piece of Au wire and then annealed at high temperature followed by quenching in water. Then the specimens were doped with H by annealing them in hydrogen atmosphere of 1 atm. followed by quenching. We measured optical absorption of those specimens. From the effect of impurity on the optical absorption spectra of Si grown in a hydrogen atmosphere, we concluded that those optical absorption lines, including 2223 cm−1line, were due to complexes of interstitial Si and H. From the temperature dependence of the intensity of 2223 cm−1line, the formation energy of interstitial Si in Au-doped Si was determined to be about 2.1 eV

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 15
Copyright
Copyright © Materials Research Society 1998

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