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Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

M. Seibt ,
J. Imschweiler  and
H.-A. Hefner
M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
J. Imschweiler
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
H.-A. Hefner
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
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Abstract

By means of transmission electron microscopy we have studied the redissolution of extended end-of-range defects during high temperature rapid thermal annealing. We find, that after the transformation of initially present {113} stacking faults into energetically more favorable structures, each type of end-of-range defect establishes its individual redissolution rate with {111} faulted loops being the most stable configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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References

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