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Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

M. Seibt ,
J. Imschweiler  and
H.-A. Hefner
M. Seibt
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
J. Imschweiler
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
H.-A. Hefner
Affiliation:
TEMIC, TELEFUNKEN microelectronic, GmbH, Theresienstr.2, D-74072 Heilbronn, Federal Republic of Germany
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Abstract

By means of transmission electron microscopy we have studied the redissolution of extended end-of-range defects during high temperature rapid thermal annealing. We find, that after the transformation of initially present {113} stacking faults into energetically more favorable structures, each type of end-of-range defect establishes its individual redissolution rate with {111} faulted loops being the most stable configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Jones, K.S., Prussin, S. and Weber, E.R., Appl. Phys. A 45, 1 (1988)Google Scholar
2 Seibt, M., Imschweiler, J. and Hefher, H.-A., Mat. Res. Soc. Proc. Vol 262, 1103 (1992)Google Scholar
3 Lambert, J.A., Dobson, P.S., Phil. Mag. 44, 1043 (1981)Google Scholar
4 Cerofolini, G.F., Meda, L., Polignano, M., Ottaviani, M.L., Bender, G., Clays, C., Armagliato, A. and Solmi, S., in: Semiconductor Silicon 1986, (The Electrochemical Soc., Pennington), p.706 Google Scholar
5 Jones, K.S. and Venables, D., J. Appl. Phys. 69, 2931 (1991)Google Scholar
6 Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. and Jacobson, D.C., Nucl. Instr. and Meth. B 7/8, 251 (1985)Google Scholar
7 Jones, K.S., Prussin, S. and Weber, E.R., J. Appl. Phys. 62, 4114 (1987)Google Scholar
8 Prussin, S. and Jones, K.S., Nucl. Instr. and Meth. B 21, 496 (1987)Google Scholar
9 Jones, K.S., Prussin, S. and Weber, E.R. Nucl. Instr. and Meth. B 21, 499 (1987)Google Scholar
10 Seibt, M., Imschweiler, J. and Hefner, H.-A., Inst. Phys. Conf. Ser. No. 134, 137 (1993)Google Scholar
11 Seibt, M., Imschweiler, J. and Hefner, H.-A., Mat.Res.Soc.Proc. Vol. 319, to be publishedGoogle Scholar
12 Bourret, A., Inst. Phys. Conf. Ser. No.87, 39 (1987)Google Scholar
13 Flynn, C.P., Point Defects and Diffusion, (Clarendon Press, Oxford 1972)Google Scholar