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Formation and Properties of TiSi2 as Contact Material for High-Temperature Thermoelectric Generators

Published online by Cambridge University Press:  29 November 2012

Fabian Assion
Affiliation:
Department of Sensor Technology, University of Paderborn, 33098 Paderborn, Germany
Marcel Schönhoff
Affiliation:
Department of Sensor Technology, University of Paderborn, 33098 Paderborn, Germany
Ulrich Hilleringmann
Affiliation:
Department of Sensor Technology, University of Paderborn, 33098 Paderborn, Germany
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Abstract

Thermoelectric generators (TEG) are capable of transforming waste heat directly into electric power. With higher temperatures the yield of the devices rises which makes high-temperature contact materials important. The formation of titanium disilicide (TiSi2) and its properties were analyzed and optimized for the use in TEG. Depending on a direct or an indirect transformation into the C54 crystal structure the process forms a layer with a resistivity of 20-22 μΩcm. Process gases influence the resistivity and result in difference of 20 %. The growing rate of TiSi2on silicon dioxide was determined; it shows a strong dependence on the used atmosphere and temperature. A maximum overgrowing length of 30 μm was found.

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Articles
Copyright
Copyright © Materials Research Society 2012 

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References

REFERENCES

Energetics, Energy Use, Loss, and Opportunities Analysis: U.S M&M; pp. 17; 2004.Google Scholar
Colgan, E.G. et al. ; Materials Science and Engineering; 16; p. 4396; 1996.CrossRefGoogle Scholar
Ma, Z., Allen, L. and Allman, D.; ‘Microstructural aspects and mechanism of the C49-to-C54 polymorphic transformation in titanium disilicide’; J. Appl. Phys.; 77(8); 1995.CrossRefGoogle Scholar
Murarka, S. P.; ‘Self-aligned silicides or metals for very large scale integrated circuit applications‘ in Journal of Vacuum Science & Technology; 4 (6); p. 13251331; 1986.Google Scholar
Maex, K. and van Rossum, M.; ‘Properties of Metal Silicides’; INSPEC; 1995.Google Scholar
NBS Monograph 25 (USA); no. 21; p. 126; 1984.CrossRefGoogle Scholar
Samsonov, G.V., Vinitskii, I.M.; Handbook of Refractory Compounds; 1980.CrossRefGoogle Scholar
Rosenkrantz, R.. Frommeyer, G.; Z. Met. Kd. (Germany); vol. 83; no. 9; p. 685689; 1992.Google Scholar
Kosolapova, T.V.; Handbook of High Temperature Compounds: Properties, Production, Application (Hemishere Publishing Corporation); 1990.Google Scholar
Wessels, P.J.J., Jongste, J.F., Janssen, G.C.A.M., Mulder, A.L., Radelaar, S., Loopstra, O.B.; J. Appl. Phys. (USA); vol. 63; no. 10; p. 49794982; 1988.CrossRefGoogle Scholar
Massalski, T.B.; Binary Alloy Phase Diagrams, 2nd edition; vol. 1-3; ASM; 1990.CrossRefGoogle Scholar
Engström, I., Lönnberg, B.; J. Appl. Phys. (USA); vol. 63; p.44764484; 1988.CrossRefGoogle Scholar
Duboz, J.Y. et al. ; Appl. Surf. Sci. (Netherlands) ; vol. 38; p. 171177; 1989.CrossRefGoogle Scholar
Ganin, E., Wind, S., et al. ; MRS Symposium Proceedings, vol. 303, Rapid Thermal and Integrated Processing 11, edited by Gelpey, Jeffrey C., Elliott, J. Kiefer, et al. ; MRS, Pittsburgh, PA; pp. 109; 1993.Google Scholar
Iida, S.; Abeb, S.; Appl. Surface Sci.; Vol. 78 (2), p141146, June 1994.CrossRefGoogle Scholar
Okamoto, T.; Tsukamoto, K.; Shimizuan, M. and Matsukawa, T.; ‘Titanium silicidation by halogen lamp annealing’; J. Appl. Phys; 57 (12); pp. 52515255; 1985.CrossRefGoogle Scholar
Assion, F., Schönhoff, M. and Hilleringmann, U.: “Titaniumdisilicide as High-Temperature Contact Material for Thermoelectric Generators”; International Conferenc on Thermoelectrics, Aalborg, Denmark, 9-12 July, 2012.Google Scholar