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Formation and Effects of Secondary Defects in Ion implanted Silicon

Published online by Cambridge University Press:  15 February 2011

Jack Washburn
Jack Washburn*
Affiliation:
Department of Engineering and Lawrence Berkeley Laboratory, University of California, Berkeley, California, 94720
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Abstract

The clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 209
Copyright
Copyright © Materials Research Society 1981

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References

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