Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-09T08:36:10.426Z Has data issue: false hasContentIssue false

Formation and Cathodoluminescence of Silicon Nanoclusters in Silica

Published online by Cambridge University Press:  11 February 2011

Maria V. Zamoryanskaya
Affiliation:
Ioffe Physico-Technical Institute, 26, Polytecknycheskaya st, St. Petersburg, Russia 194021, email: [email protected], fax.7–812–2471017.
Vladimir I. Sokolov
Affiliation:
Ioffe Physico-Technical Institute, 26, Polytecknycheskaya st, St. Petersburg, Russia 194021, email: [email protected], fax.7–812–2471017.
Get access

Abstract

The process of formation of silicon nanoclusters in a silicate matrix by the focused electron beam of high power and their cathodoluminescent properties were studied in this paper. The size of the silicon clusters and their concentration depend on the electron beam power and on the properties of the silicate matrix (density, porosity, composition). In this paper we studied the evolution of cathodoluminescent properties in bulk silicon oxide, porous silicon oxide glass, silicagel (n·SiO2·m·H2O) and opal. The result of the modification of silica is the appearance of the CL bands at 2.3eV in green region, and the bands at 1.4 and 1.1eV. The CL intensity of these bands increases during the interaction with electron beam. The volt-ampere characteristics of the modified areas of the silica are non-linear and depend on the time of the interaction and the power of the electron beam. We relate the appearance of these new CL bands with formation of oxygen-deficit defects and silicon clusters.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kolobov, N.A., Samochvalov, M.M.: Diffusion and Oxidation in Semiconductors. (Metallurgy, Moscow 1975)Google Scholar
[2] Zamoryanskaya, M.V., Sokolov, V.I.. Physic of Solid State, Vol, 42 (2001) p.Google Scholar
[3] Zamoryanskaya, M.V., Vainshenker, I.A., Zamoryanskyi, A.N., Equipment and Technique of Experiment, (1987), N.4, p.161.Google Scholar
[4] Zamoryanskaya, M.V., Sokolov, V.I., Sitnikova, A.A., Konnikov, C.G., Silid State Phenomena, Vol. 63–64 (1998), p.237.Google Scholar
[5] Skuja, L.N., Silin, A.R., Phys. Stat. Solid. A, Vol. 70, (1982), p.43.Google Scholar
[6] Goldberdge, M., Fittihg, H.-J., Trukhin, A., J. Non-Cryst. Solids Vol. 220 (1997), p.69 Google Scholar
[7] Skuja, L.N., Streletsky, A.N., Pakovich, A.B., Solid State Com. Vol. 50, (1984), p.1069 Google Scholar
[7] Nishikawa, H., Watanabe, E., Ito, D., Sakurai, Y., Nagasawa, K., Ohki, Y., J. Appl. Phys, Vol. 80, (1996), p.3513.Google Scholar
[8] Bary, V.G., Elinson, M.I., Gitov, V.A., Zaharov, L. Yu., Luzanov, V.A., Melnik, N.N., Steponav, G.V., Chernuchin, A.P., Microelectronic Vol.27 (1998), p.45.Google Scholar