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Formation and Binding Energies of Vacancy Clusters in Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
We critically readdress the problem of vacancy clustering in silicon by perform large-scale tight-binding molecular dynamics simulations. We also compare the results of this quantum-mechanical approach to the widely used model-potential molecular dynamics scheme based on the Tersoff and Stillinger-Weber interatomic potentials.
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- Copyright © Materials Research Society 1997
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