Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-09T12:42:02.250Z Has data issue: false hasContentIssue false
  • English
  • Français

Forkation and Oxidation of Titanium Silicide

Published online by Cambridge University Press:  26 February 2011

Tzuen-Luh Huang  and
Shuit-Tong Lee
Tzuen-Luh Huang
Affiliation:
Electronic Research Laboratories - Photographic Products Group, Eastman Kodak Company, Rochester, New York 14650
Shuit-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
Get access

Abstract

Refractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N2 ambient. The oxidation results of Ti suicide formed using RTP in N2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 339
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lau, C. K., See, Y. C., Scott, D. B., Bridges, J. M., Perna, S. M., and Davies, R. D., IEDM Tech. Dig., 714 (1982).Google Scholar
2. Ting, C. Y., Iyer, S. S., Osburn, C. M., Hu, G. J., and Schweighart, A. H., ECS Dig. Extended Abstract 82, 254 (1982).Google Scholar
3. Lau, C. K., ECS Dig. Extended Abstract 21, 569 (1983).Google Scholar
4. Alperin, M. E., Holaway, T. C., Haken, R. A., Gosmeyer, D.C.D., Karnaugh, R. V., and Parmantie, W. D., IEEE ED-32, 141 (1985).Google Scholar
5. Haken, R. A., J. Vac. Sci. Tech. B3, 1657 (1985).Google Scholar
6. Koh, Y., Chien, F., and Vora, M., J. Vac. Sci. Tech. B3, 1715 (1985).Google Scholar
7. Chen, J-R., Houng, M-P., Hsiung, S-K., and Liu, Y-C., Appl. Phys. Lett. 29, 598 (1980).Google Scholar
8. Chen, J-R., Liu, Y-C., and Chu, S-D., Electron, J. Materials 11, 355 (1982).Google Scholar
9. d'Heurle, F. M., Irene, E. A., and Ting, C. Y., Appl. Phys. Lett. 42, 361 (1983).Google Scholar
10. Baglin, J. E., d'Heurle, F. M., and Peterson, C. S., J. Appl. Phys. 54 1849 (1983).Google Scholar
11. Muraka, S. P., Suicides for VLSI Applications (Academic Press, New York, 1983), Chapter 5.Google Scholar
12. Ting, C. Y. and Iyer, S. S., Proceedings of 2nd International IEEE VLSI Multilevel Interconnection Conference, 1985, 307.Google Scholar
13. Tanielian, M., Lajos, R., and Blackstone, S., J. Electrochem. Soc. 132. 1456 (1985).Google Scholar